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Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection
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| Author(s) |
Felix GESELE, Christian BÄUMLER, Thomas BASLER, Thomas BRÜCKNER |
| Abstract |
This paper investigates the short-circuit behavior of SiC MOSFETs in a quasi series connection, which can be found in several topologies with three or more switches in a commutation loop. In the event of a device failure, this could offer the opportunity to select a device which had seen less stress up to this point to turn off the short circuit, and thus improve the (general) failure handling. Besides a theoretical analysis, short-circuit tests for such configurations are carried out with state-of-the-art 3.3-kV SiC MOSFET half-bridge modules. The analysis focuses particularly on the voltage distribution between the switches, examining the influence of different physical setups and device parameters. |
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| Filename: | 0323-epe2025-full-22071902.pdf |
| Filesize: | 1.219 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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