EPE Association: EPE 2023 - LS6a: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors

EPE 2023 - LS6a: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 11: Focus Topics > EPE 2023 - LS6a: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors

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   Minimization of parasitic capacitance for proper function of 3 level ANPC with GaN switches
By Qian LI, Guenter SCHROEDER [View]
[Download]

Abstract: With GaN semiconductors the slew rate of the voltage dv/dt is a problem which can cause electromagnetic interference (EMI) and undesirable turning on of semiconductors. In this paper different design examples for the PCB (printed circuit board) for the switches and their drivers are introduced. An optimized design is proposed.

   Mitigating Inter-chip Oscillation of paralleled SiC MOSFETs
By Florian SAWALLICH, Hans-Günter ECKEL [View]
[Download]

Abstract: In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs can occur. This kind of oscillation is known as inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper reveals the mechanism of inter-chip oscillation and presents effective methods for mitigation.

   Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area
By Masaki TAKAHASHI, Zhongchao SUN, Jannick Kjær JØRGENSEN, Szymon BECZKOWSKI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN [View]
[Download]

Abstract: Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with largerdie edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.

EPE 2023 - LS6a: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 11: Focus Topics > EPE 2023 - LS6a: Focus Topic 5 - Emerging Power Electronics Devices and Semiconductors
	[return to parent folder]

	Minimization of parasitic capacitance for proper function of 3 level ANPC with GaN switches By Qian LI, Guenter SCHROEDER	[View] [Download]
Abstract: With GaN semiconductors the slew rate of the voltage dv/dt is a problem which can cause electromagnetic interference (EMI) and undesirable turning on of semiconductors. In this paper different design examples for the PCB (printed circuit board) for the switches and their drivers are introduced. An optimized design is proposed.

	Mitigating Inter-chip Oscillation of paralleled SiC MOSFETs By Florian SAWALLICH, Hans-Günter ECKEL	[View] [Download]
Abstract: In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs can occur. This kind of oscillation is known as inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper reveals the mechanism of inter-chip oscillation and presents effective methods for mitigation.

	Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area By Masaki TAKAHASHI, Zhongchao SUN, Jannick Kjær JØRGENSEN, Szymon BECZKOWSKI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN	[View] [Download]
Abstract: Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with largerdie edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.