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Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area
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| Author(s) |
Masaki TAKAHASHI, Zhongchao SUN, Jannick Kjær JØRGENSEN, Szymon BECZKOWSKI, Stig MUNK-NIELSEN, Asger Bjørn JØRGENSEN |
| Abstract |
Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with largerdie edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing. |
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| Filename: | 0122-epe2023-full-09473286.pdf |
| Filesize: | 1.726 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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