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Mitigating Inter-chip Oscillation of paralleled SiC MOSFETs
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| Author(s) |
Florian SAWALLICH, Hans-Günter ECKEL |
| Abstract |
In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs can occur. This kind of oscillation is known as inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper reveals the mechanism of inter-chip oscillation and presents effective methods for mitigation. |
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| Filename: | 0481-epe2023-full-07180121.pdf |
| Filesize: | 2.921 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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