EPE Association: EPE 2023 - LS2b: Active Devices and Components (Wide Bandgap and other New Materials)

EPE 2023 - LS2b: Active Devices and Components (Wide Bandgap and other New Materials)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - LS2b: Active Devices and Components (Wide Bandgap and other New Materials)

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   Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET
By Benjamin KJAERSGAARD, Asger Bjørn JØRGENSEN, Thore AUNSBORG, Jannick JØRGENSEN, Gao LIU, Bjørn RANNESTAD, Hongbo ZHAO, Stig MUNK-NIELSEN [View]
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Abstract: Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.

   Improvement of Surge Current Capability of 3.3 kV SBD-Embedded SiC-MOSFET Module
By Shigeru OKIMOTO, Yoichi HIRONAKA, Kenji HATORI, Akifumi IIJIMA, Kotaro KAWAHARA, Katsutoshi SUGAWARA, Nils SOLTAU [View]
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Abstract: SBD-embedded SiC-MOSFETs provide high reliability by preventing device degradation due to inherent body diode current. On the other hand, they have the disadvantage of lower surge current or I²t capability in general. This paper introduces the novel device structure named bipolar mode activation cell (BMA cell) to solve this problem. We actually evaluated the modules equipped with the chips having BMA cells. As a result, it has been confirmed that the surge current capability is equivalent to or higher than that of conventional Si-diodes. In addition, the pulse width dependency of the surge current capability of SBD-embedded SiC-MOSFET module has been evaluated and its estimated pulse width dependency curve is presented.

   Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability
By Sebastian NEIRA, Ross MATHIESON, Mason PARKER, Paul JUDGE, Stephen FINNEY [View]
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Abstract: This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.

EPE 2023 - LS2b: Active Devices and Components (Wide Bandgap and other New Materials)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - LS2b: Active Devices and Components (Wide Bandgap and other New Materials)
	[return to parent folder]

	Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET By Benjamin KJAERSGAARD, Asger Bjørn JØRGENSEN, Thore AUNSBORG, Jannick JØRGENSEN, Gao LIU, Bjørn RANNESTAD, Hongbo ZHAO, Stig MUNK-NIELSEN	[View] [Download]
Abstract: Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.

	Improvement of Surge Current Capability of 3.3 kV SBD-Embedded SiC-MOSFET Module By Shigeru OKIMOTO, Yoichi HIRONAKA, Kenji HATORI, Akifumi IIJIMA, Kotaro KAWAHARA, Katsutoshi SUGAWARA, Nils SOLTAU	[View] [Download]
Abstract: SBD-embedded SiC-MOSFETs provide high reliability by preventing device degradation due to inherent body diode current. On the other hand, they have the disadvantage of lower surge current or I²t capability in general. This paper introduces the novel device structure named bipolar mode activation cell (BMA cell) to solve this problem. We actually evaluated the modules equipped with the chips having BMA cells. As a result, it has been confirmed that the surge current capability is equivalent to or higher than that of conventional Si-diodes. In addition, the pulse width dependency of the surge current capability of SBD-embedded SiC-MOSFET module has been evaluated and its estimated pulse width dependency curve is presented.

	Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability By Sebastian NEIRA, Ross MATHIESON, Mason PARKER, Paul JUDGE, Stephen FINNEY	[View] [Download]
Abstract: This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC) modules, using a gate-driver capable of implementing sub-nanosecond delays between gate signals. The gate-driver is implemented with a central control unit complemented with programmable digital buffers to achieve a time-skew resolution of 0.5 ns. Results show the time resolution required to balance the current distribution in an experimental setup with four 1200 V/400 A SiC modules in parallel. Additionally, the potential of having a thermal runaway due to the current imbalance is analysed using the programmable delays to test the switch of the modules at temperatures up to 105°C.