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Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET
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| Author(s) |
Benjamin KJAERSGAARD, Asger Bjørn JØRGENSEN, Thore AUNSBORG, Jannick JØRGENSEN, Gao LIU, Bjørn RANNESTAD, Hongbo ZHAO, Stig MUNK-NIELSEN |
| Abstract |
Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations. |
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| Filename: | 0451-epe2023-full-09061815.pdf |
| Filesize: | 848.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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