EPE Association: EPE 2023 - DS1c: System Integration, Packaging & Thermal Management

EPE 2023 - DS1c: System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS1c: System Integration, Packaging & Thermal Management

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   A new SiC power module assembly based on silver sintering bonding
By Lisheng WANG, Zhouqiao LEI, Ruizhi LIANG, Gert RIETVELD, Raymond J. E. HUETING [View]
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Abstract: Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the dies are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 \%) can be achieved provided that the pre-heating temperature is 80 _C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 _C, 15 MPa and 10 mins.

   Dual Gate ClampDRIVE SiC FET Based Traction Inverter Design Demonstration
By Shusun QU, Anup BHALLA [View]
[Download]

Abstract: The switching speed can be effectively adjusted by JFET gate resistor in the SiC cascode structure [1]. This adjustable switch speed is critical for traction inverter application to mitigate the overshoot, oscillation, and common mode leakage current. This work shows how to implement Qorvo dual gate top side cooled (TSC) SiC FET in traction inverter design to achieve the mentioned benefits. Test results justified this design approach.

EPE 2023 - DS1c: System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS1c: System Integration, Packaging & Thermal Management
	[return to parent folder]

	A new SiC power module assembly based on silver sintering bonding By Lisheng WANG, Zhouqiao LEI, Ruizhi LIANG, Gert RIETVELD, Raymond J. E. HUETING	[View] [Download]
Abstract: Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the dies are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 \%) can be achieved provided that the pre-heating temperature is 80 _C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 _C, 15 MPa and 10 mins.

	Dual Gate ClampDRIVE SiC FET Based Traction Inverter Design Demonstration By Shusun QU, Anup BHALLA	[View] [Download]
Abstract: The switching speed can be effectively adjusted by JFET gate resistor in the SiC cascode structure [1]. This adjustable switch speed is critical for traction inverter application to mitigate the overshoot, oscillation, and common mode leakage current. This work shows how to implement Qorvo dual gate top side cooled (TSC) SiC FET in traction inverter design to achieve the mentioned benefits. Test results justified this design approach.