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A new SiC power module assembly based on silver sintering bonding
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| Author(s) |
Lisheng WANG, Zhouqiao LEI, Ruizhi LIANG, Gert RIETVELD, Raymond J. E. HUETING |
| Abstract |
Driven by the need for more reliable die and substrate attachment in wide band gap power electronics, a new bonding process scheme of silver (Ag) sintering of large interfaces has been developed for silicon-carbide power MOSFETs, where the dies are placed before pre-drying (or pre-heating) the sintering Ag paste. Using the new wet placement process, a maximum shear strength (76 MPa) and minimum void fraction (0.02 \%) can be achieved provided that the pre-heating temperature is 80 _C and the power devices are well positioned by a specially developed vacuum-assisted fixture. Applied on an STPak sub-module power device, it still showed full functionality after sintering at 230 _C, 15 MPa and 10 mins. |
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| Filename: | 0373-epe2023-full-09294074.pdf |
| Filesize: | 4.623 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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