EPE Association: EPE 2023 - DS3b: EMI/EMC in Power Electronics including HF Phenomena

EPE 2023 - DS3b: EMI/EMC in Power Electronics including HF Phenomena
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 03: Measurement and Control > EPE 2023 - DS3b: EMI/EMC in Power Electronics including HF Phenomena

   [return to parent folder]

   A Low-Noise Switching Method with Variable Frequencies and Phase Shifts Which Takes into Consideration Measurement Conditions in DC-DC Converters
By Retsu SUGAWARA, Keiji WADA [View]
[Download]

Abstract: In this paper, a novel method for low-noise switching which takes into consideration measurement conditions used to decide parameters based on theoretical calculations is suggested. The proposed method allows for a reduction in noise by 6dB in target frequencies, even within conditions where reducing noise via conventional methods is difficult.

   Design and Comparison of Input Filter Configurations for SiC-MOSFET-Based Automotive DC-AC Inverters
By Mohammad ALI, Benjamin KNEBUSCH, Lennart JUENEMANN, Jens FRIEBE, Axel MERTENS [View]
[Download]

Abstract: This paper examines the performance of EMIinput filters for SiC-MOSFET-based automotive DC-ACinverters on the DC side. The filter performance is eval-uated based on its ability to attenuate electromagneticinterference (EMI) according to the system requirements.The attenuation of EMI filters is greatly affected by themutual couplings between filter components and theirparasitic elements. As a result, a comprehensive set ofdesign principles is formulated to optimize the perfor-mance of EMI filters, taking into account these crucialfactors. Moreover, various configurations of EMI inputfilters, including 1-stage and 2-stage filters, are investigatedto determine their attenuation levels. Additionally, EMImeasurements are conducted using these filters to observetheir performance with respect to parasitic elements andmutual couplings.

   dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs
By Franco FIORI, Marcus NÜBLING, Frank KLOTZ [View]
[Download]

Abstract: E-mode GaN HEMTs in half bridges can be turned on by spurious voltage spikes resulting from output voltage switching or even damaged by undervoltages (overvoltages) caused by the gate driver output switching. This work proposes a solution to address such problems without lowering the gate loop stray inductance.

   In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit
By Samuel FABER, Benedikt KOHLHEPP, Julian DOBUSCH, Jeremias KAISER, Thomas DÜRBAUM [View]
[Download]

Abstract: Wide bandgap power devices are pushing the trend of increasing switching frequencies even further, giving rise to a frequency shift of EMC noise. As a result, parasitic elements gain significantly in importance. For this reason, parasitic capacitances of a half-bridge circuit PCB are studied by means of numerical simulations. After an introduction into the half-bridge circuit in terms of CM noise, the focus is layed on the simulation methods applied, the generation of a suitable simulation model as well as the development of a more intuitive equivalent circuit. Simulation results for typical measurement conditions are presented and compared with each other.

   Prediction of Electromagnetic Radiation Emission from Telecommunication Power Supply
By Weixin WANG, Junping HE, Tao YANG, Lingling CAO [View]
[Download]

Abstract: The radiated emission (RE) certification is a major challenge to the development of a telecommunication (telecom) power supply. This challenge makes the accurate prediction of far field radiation important. This work proposes a novel far field RE prediction method combines the common mode (CM) voltage driving sources and their corresponding radiation transfer functions. The CM voltage driving sources of an AC/DC telecom power supply are identified and measured, and the amplitude-frequency curves of radiation transfer functions are gotten by electromagnetic numerical simulations. Then, the far field RE of a 4 kW telecom power supply with complex test layout is predicted and verified by experiment results in a 10 m semi-anechoic chamber. The main influence factors of radiated emission are subsequently analyzed too, which provide a theoretical basis for suppressing far field radiation.

   Research on EMI suppression method of switching power supply based on piezoelectric ceramic impedance resonance design
By Mengxia ZHOU, Bin CHENG, Wei YAN, Yang ZHAO, Jiayu ZHANG [View]
[Download]

Abstract: Piezoelectric materials can produce a low impedance propagation path at its resonant frequency, and the impedance characteristics outside the resonant frequency are similar to capacitance. In view of this, this paper adopts a design method based on impedance resonance of piezoelectric materials to design piezoelectric materials and replace Y capacitors to optimize the EMI suppression effect of the converter.

   The Trade-off of Switching Losses and EMIGeneration for SiC MOSFET with Common Source and Kelvin Source Configurations
By Peng XUE, Pooya DAVARI [View]
[Download]

Abstract: In this paper, the characteristics of dId/dt, dVds/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.

EPE 2023 - DS3b: EMI/EMC in Power Electronics including HF Phenomena
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 03: Measurement and Control > EPE 2023 - DS3b: EMI/EMC in Power Electronics including HF Phenomena
	[return to parent folder]

	A Low-Noise Switching Method with Variable Frequencies and Phase Shifts Which Takes into Consideration Measurement Conditions in DC-DC Converters By Retsu SUGAWARA, Keiji WADA	[View] [Download]
Abstract: In this paper, a novel method for low-noise switching which takes into consideration measurement conditions used to decide parameters based on theoretical calculations is suggested. The proposed method allows for a reduction in noise by 6dB in target frequencies, even within conditions where reducing noise via conventional methods is difficult.

	Design and Comparison of Input Filter Configurations for SiC-MOSFET-Based Automotive DC-AC Inverters By Mohammad ALI, Benjamin KNEBUSCH, Lennart JUENEMANN, Jens FRIEBE, Axel MERTENS	[View] [Download]
Abstract: This paper examines the performance of EMIinput filters for SiC-MOSFET-based automotive DC-ACinverters on the DC side. The filter performance is eval-uated based on its ability to attenuate electromagneticinterference (EMI) according to the system requirements.The attenuation of EMI filters is greatly affected by themutual couplings between filter components and theirparasitic elements. As a result, a comprehensive set ofdesign principles is formulated to optimize the perfor-mance of EMI filters, taking into account these crucialfactors. Moreover, various configurations of EMI inputfilters, including 1-stage and 2-stage filters, are investigatedto determine their attenuation levels. Additionally, EMImeasurements are conducted using these filters to observetheir performance with respect to parasitic elements andmutual couplings.

	dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs By Franco FIORI, Marcus NÜBLING, Frank KLOTZ	[View] [Download]
Abstract: E-mode GaN HEMTs in half bridges can be turned on by spurious voltage spikes resulting from output voltage switching or even damaged by undervoltages (overvoltages) caused by the gate driver output switching. This work proposes a solution to address such problems without lowering the gate loop stray inductance.

	In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit By Samuel FABER, Benedikt KOHLHEPP, Julian DOBUSCH, Jeremias KAISER, Thomas DÜRBAUM	[View] [Download]
Abstract: Wide bandgap power devices are pushing the trend of increasing switching frequencies even further, giving rise to a frequency shift of EMC noise. As a result, parasitic elements gain significantly in importance. For this reason, parasitic capacitances of a half-bridge circuit PCB are studied by means of numerical simulations. After an introduction into the half-bridge circuit in terms of CM noise, the focus is layed on the simulation methods applied, the generation of a suitable simulation model as well as the development of a more intuitive equivalent circuit. Simulation results for typical measurement conditions are presented and compared with each other.

	Prediction of Electromagnetic Radiation Emission from Telecommunication Power Supply By Weixin WANG, Junping HE, Tao YANG, Lingling CAO	[View] [Download]
Abstract: The radiated emission (RE) certification is a major challenge to the development of a telecommunication (telecom) power supply. This challenge makes the accurate prediction of far field radiation important. This work proposes a novel far field RE prediction method combines the common mode (CM) voltage driving sources and their corresponding radiation transfer functions. The CM voltage driving sources of an AC/DC telecom power supply are identified and measured, and the amplitude-frequency curves of radiation transfer functions are gotten by electromagnetic numerical simulations. Then, the far field RE of a 4 kW telecom power supply with complex test layout is predicted and verified by experiment results in a 10 m semi-anechoic chamber. The main influence factors of radiated emission are subsequently analyzed too, which provide a theoretical basis for suppressing far field radiation.

	Research on EMI suppression method of switching power supply based on piezoelectric ceramic impedance resonance design By Mengxia ZHOU, Bin CHENG, Wei YAN, Yang ZHAO, Jiayu ZHANG	[View] [Download]
Abstract: Piezoelectric materials can produce a low impedance propagation path at its resonant frequency, and the impedance characteristics outside the resonant frequency are similar to capacitance. In view of this, this paper adopts a design method based on impedance resonance of piezoelectric materials to design piezoelectric materials and replace Y capacitors to optimize the EMI suppression effect of the converter.

	The Trade-off of Switching Losses and EMIGeneration for SiC MOSFET with Common Source and Kelvin Source Configurations By Peng XUE, Pooya DAVARI	[View] [Download]
Abstract: In this paper, the characteristics of dId/dt, dVds/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.