| Filename: | 0100-epe2023-full-10010375.pdf |
| Filesize: | 1.157 MB |
| The Trade-off of Switching Losses and EMIGeneration for SiC MOSFET with Common Source and Kelvin Source Configurations | ||||||
| Author(s) | Peng XUE, Pooya DAVARI | |||||
| Abstract | In this paper, the characteristics of dId/dt, dVds/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2023-09-24 by System | |||||
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