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dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs
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| Author(s) |
Franco FIORI, Marcus NÜBLING, Frank KLOTZ |
| Abstract |
E-mode GaN HEMTs in half bridges can be turned on by spurious voltage spikes resulting from output voltage switching or even damaged by undervoltages (overvoltages) caused by the gate driver output switching. This work proposes a solution to address such problems without lowering the gate loop stray inductance. |
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| Filename: | 0459-epe2023-full-11202356.pdf |
| Filesize: | 1.178 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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