EPE Association: EPE 2022 - DS1c: Components and Devices for Specific Applications, including for Pulsed Power

EPE 2022 - DS1c: Components and Devices for Specific Applications, including for Pulsed Power
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - DS1c: Components and Devices for Specific Applications, including for Pulsed Power

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   A Pulse generator based on Transmission line Transformer for Insulation Aging Test
By Xiao YU [View]
[Download]

Abstract: A pulse generator consisting of a transmission line transformer and GaN-based full bridge for generating high-repetitive impulse voltage stress with a high slew rate is proposed. GaN-half-bridges are used to generate fast switching edges, while the wide-band transmission line transformer is adopted to achieve the required voltage gain for an accelerated test without losing the interested high-frequency components contained in the fast edges. Another benefit of using the transmission line transformer is the spatial separation of pulse generation at room temperature and devices under test in a climate chamber, where the temperature for an accelerated test can be up to 150°C. The detailed operation principle, design considerations, simulation implementation, and experimental results for the proposed pulse generator are also presented. A peak-to-peak voltage of 400V x 8 and a maximal voltage slew rate of 250 V/ns have been achieved.

   Comparison of Pulse Current Capability of Different Switches for Modular Multilevel Converter-based Arbitrary Wave shape Generator used for Dielectric Testing of High Voltage Grid Assets
By Dhanashree Ashok GANESHPURE [View]
[Download]

Abstract: This article compares the pulse current capability of various Semiconductor (SM) device technologies for Modular Multilevel Converter (MMC)-based High Voltage (HV) Arbitrary Waveform Generator (AWG) for dielectric testing of grid assets to find the most suitable SM device technology which can perform well in generating lightning impulse that demands a high peak current for a relatively short time. For the typical HV loads of the AWG, Lightning Impulse (LI) test may require a pulse current to rise to \SI{1.7}{\kilo\ampere} in \SI{0.2}{\micro\second}. It is essential to highlight that most other dielectric tests performed with an HV AWG demand a relatively low current such as less than 10 A. Therefore, TO-packaged semiconductors would be well-suited for a large number of tests other than short impulses. To optimize the size and cost of the HV AWG, this paper evaluates the pulse current capabilities of TO-packaged semiconductors for the above-mentioned current requirement to generate LI waveform. The first comparison is made among Non-Punch Through (NPT) Si IGBT, Field Stop (FS) Si IGBT, Si MOSFET, and SiC MOSFETs with roughly the same current rating of 40 A. It is found that the Si MOSFET gives the fastest rise time of \SI{0.42}{\micro\second} and the NPT IGBT gives the highest current amplification factor of almost 12 times greater than its own rated current. However, $\mathrm{3^{rd}}$ Generation SiC MOSFET combines Si MOSFET and NPT IGBT capabilities to generate a fast rise time and high peak pulse current. Additionally, the FS IGBT is compared with the SiC MOSFET. The SiC MOSFET performs better in peak current capability and the obtained rise time. All in all, the research results and the stringent HV AWG requirements for LI show that the application requires a relatively complex switch implementation with far superior current capability than in normal operation. Therefore, a parallel connection of several TO-packaged devices is necessary to generate LI from MMC-based HV AWG.

   Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction
By Guangyao YU [View]
[Download]

Abstract: This paper presents the semiconductor losses analytical equations in closed form for two-level voltagesource converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in highpower applications. The reverse parallel current conduction between the SiC MOSFETs channel andbody diode is considered. A circuit simulation model in PLECS to estimate the semiconductor losses isalso given. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier will beshown.

   Design Procedure for Transformer-based Solid-State Pulse Modulators with Damping Network
By Spyridon STATHIS [View]
[Download]

Abstract: This paper presents a systematic procedure for designing transformer-based solid-state pulse modulators, which include a damping network at the load side in order to minimize the rise time and the overshoot of the pulse. The design procedure is applied to the specifications of the CARM modulator system to evaluate its performance.

   Influence of Power Semiconductor Device Variations on Pulse Shape of Nanosecond Pulses in a Solid-State Linear Transformer Driver
By Raffael RISCH [View]
[Download]

Abstract: Power semiconductors show a significant variation in their electrical characteristics attributed to fluctuations during their fabrication process. This can lead to critical voltage and current imbalances in ultra-fast switching multi-cell topologies/pulse generators. This paper explores this problem based on a statistical model of a SiC MOSFET and Monte-Carlo simulations.

   Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts byDeliberate Field Coupling
By Hauke LUTZEN [View]
[Download]

Abstract: The ever-increasing switching speed of semiconductor devices requires a precise measurement of steep current transients. The M-shunt concept offers high signal fidelity, good cooling, and simplemanufacturing. Depending on the resistive material used, temperature as well as skin and proximityeffects impede static and dynamic measurements to a different degree. A step forward has been derived from the ideal coaxial shunt, so far, a purely theoretical concept, which is hardly producible due to its sophisticated structure. By transferring this concept to the M-shunt structure with its improved PCB manufacturing technologies it can now be realised in practice. Nevertheless, the calibration and the correct degree of delay compensation remain challenging and are investigated more closely within this paper. Furthermore, it will be discussed why the conventional method of bandwidth determination doesn't work for the M-shunt structure. In addition to the low inductance introduced into the load circuit, the high bandwidth of the shunts could be demonstrated, as well as the possibility to extend this by design rules. Supplemented by the advantages of the lower load inductance, the M-shunt will become the method of choice for characterising switching transients at least up to 200 MHz required bandwidth eventually. Although it is obviously difficult to improve the 3 dB bandwidth with suitable design rules, the range of nearly entirely unaffected measurement frequencies (e.g. inf. 1 dB) can be significantly extended by limited coupling. For even higher frequencies, measurements of the current M-shunt models, as well as for the coaxial shunts used as reference, should be corrected by post processing to get precise measurement results.

EPE 2022 - DS1c: Components and Devices for Specific Applications, including for Pulsed Power
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - DS1c: Components and Devices for Specific Applications, including for Pulsed Power
	[return to parent folder]

	A Pulse generator based on Transmission line Transformer for Insulation Aging Test By Xiao YU	[View] [Download]
Abstract: A pulse generator consisting of a transmission line transformer and GaN-based full bridge for generating high-repetitive impulse voltage stress with a high slew rate is proposed. GaN-half-bridges are used to generate fast switching edges, while the wide-band transmission line transformer is adopted to achieve the required voltage gain for an accelerated test without losing the interested high-frequency components contained in the fast edges. Another benefit of using the transmission line transformer is the spatial separation of pulse generation at room temperature and devices under test in a climate chamber, where the temperature for an accelerated test can be up to 150°C. The detailed operation principle, design considerations, simulation implementation, and experimental results for the proposed pulse generator are also presented. A peak-to-peak voltage of 400V x 8 and a maximal voltage slew rate of 250 V/ns have been achieved.

	Comparison of Pulse Current Capability of Different Switches for Modular Multilevel Converter-based Arbitrary Wave shape Generator used for Dielectric Testing of High Voltage Grid Assets By Dhanashree Ashok GANESHPURE	[View] [Download]
Abstract: This article compares the pulse current capability of various Semiconductor (SM) device technologies for Modular Multilevel Converter (MMC)-based High Voltage (HV) Arbitrary Waveform Generator (AWG) for dielectric testing of grid assets to find the most suitable SM device technology which can perform well in generating lightning impulse that demands a high peak current for a relatively short time. For the typical HV loads of the AWG, Lightning Impulse (LI) test may require a pulse current to rise to \SI{1.7}{\kilo\ampere} in \SI{0.2}{\micro\second}. It is essential to highlight that most other dielectric tests performed with an HV AWG demand a relatively low current such as less than 10 A. Therefore, TO-packaged semiconductors would be well-suited for a large number of tests other than short impulses. To optimize the size and cost of the HV AWG, this paper evaluates the pulse current capabilities of TO-packaged semiconductors for the above-mentioned current requirement to generate LI waveform. The first comparison is made among Non-Punch Through (NPT) Si IGBT, Field Stop (FS) Si IGBT, Si MOSFET, and SiC MOSFETs with roughly the same current rating of 40 A. It is found that the Si MOSFET gives the fastest rise time of \SI{0.42}{\micro\second} and the NPT IGBT gives the highest current amplification factor of almost 12 times greater than its own rated current. However, $\mathrm{3^{rd}}$ Generation SiC MOSFET combines Si MOSFET and NPT IGBT capabilities to generate a fast rise time and high peak pulse current. Additionally, the FS IGBT is compared with the SiC MOSFET. The SiC MOSFET performs better in peak current capability and the obtained rise time. All in all, the research results and the stringent HV AWG requirements for LI show that the application requires a relatively complex switch implementation with far superior current capability than in normal operation. Therefore, a parallel connection of several TO-packaged devices is necessary to generate LI from MMC-based HV AWG.

	Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction By Guangyao YU	[View] [Download]
Abstract: This paper presents the semiconductor losses analytical equations in closed form for two-level voltagesource converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in highpower applications. The reverse parallel current conduction between the SiC MOSFETs channel andbody diode is considered. A circuit simulation model in PLECS to estimate the semiconductor losses isalso given. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier will beshown.

	Design Procedure for Transformer-based Solid-State Pulse Modulators with Damping Network By Spyridon STATHIS	[View] [Download]
Abstract: This paper presents a systematic procedure for designing transformer-based solid-state pulse modulators, which include a damping network at the load side in order to minimize the rise time and the overshoot of the pulse. The design procedure is applied to the specifications of the CARM modulator system to evaluate its performance.

	Influence of Power Semiconductor Device Variations on Pulse Shape of Nanosecond Pulses in a Solid-State Linear Transformer Driver By Raffael RISCH	[View] [Download]
Abstract: Power semiconductors show a significant variation in their electrical characteristics attributed to fluctuations during their fabrication process. This can lead to critical voltage and current imbalances in ultra-fast switching multi-cell topologies/pulse generators. This paper explores this problem based on a statistical model of a SiC MOSFET and Monte-Carlo simulations.

	Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts byDeliberate Field Coupling By Hauke LUTZEN	[View] [Download]
Abstract: The ever-increasing switching speed of semiconductor devices requires a precise measurement of steep current transients. The M-shunt concept offers high signal fidelity, good cooling, and simplemanufacturing. Depending on the resistive material used, temperature as well as skin and proximityeffects impede static and dynamic measurements to a different degree. A step forward has been derived from the ideal coaxial shunt, so far, a purely theoretical concept, which is hardly producible due to its sophisticated structure. By transferring this concept to the M-shunt structure with its improved PCB manufacturing technologies it can now be realised in practice. Nevertheless, the calibration and the correct degree of delay compensation remain challenging and are investigated more closely within this paper. Furthermore, it will be discussed why the conventional method of bandwidth determination doesn't work for the M-shunt structure. In addition to the low inductance introduced into the load circuit, the high bandwidth of the shunts could be demonstrated, as well as the possibility to extend this by design rules. Supplemented by the advantages of the lower load inductance, the M-shunt will become the method of choice for characterising switching transients at least up to 200 MHz required bandwidth eventually. Although it is obviously difficult to improve the 3 dB bandwidth with suitable design rules, the range of nearly entirely unaffected measurement frequencies (e.g. inf. 1 dB) can be significantly extended by limited coupling. For even higher frequencies, measurements of the current M-shunt models, as well as for the coaxial shunts used as reference, should be corrected by post processing to get precise measurement results.