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Influence of Power Semiconductor Device Variations on Pulse Shape of Nanosecond Pulses in a Solid-State Linear Transformer Driver
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| Author(s) |
Raffael RISCH |
| Abstract |
Power semiconductors show a significant variation in their electrical characteristics attributed to fluctuations during their fabrication process. This can lead to critical voltage and current imbalances in ultra-fast switching multi-cell topologies/pulse generators. This paper explores this problem based on a statistical model of a SiC MOSFET and Monte-Carlo simulations. |
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| Filename: | 0101-epe2022-full-11475978.pdf |
| Filesize: | 2.575 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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