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Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction
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| Author(s) |
Guangyao YU |
| Abstract |
This paper presents the semiconductor losses analytical equations in closed form for two-level voltagesource converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in highpower applications. The reverse parallel current conduction between the SiC MOSFETs channel andbody diode is considered. A circuit simulation model in PLECS to estimate the semiconductor losses isalso given. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier will beshown. |
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| Filename: | 0188-epe2022-full-10175048.pdf |
| Filesize: | 1.476 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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