EPE Association: EPE 1987 - 02 - Lecture Session 1.02: COMPONENTS

EPE 1987 - 02 - Lecture Session 1.02: COMPONENTS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1987 - Conference > EPE 1987 - 02 - Lecture Session 1.02: COMPONENTS

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   FAST SWITCHING THYRISTORS REPLACE THYRATRONS IN HIGH-CURRENT PULSE APPLICATIONS
By J.-L. Steiner; A. Schweizer; J. Vitins [View]
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Abstract: Continuing development of power semiconductor devices is extending their range of application to completely new fields, as well as areas in which components such as electron tubes have previously been used. A case in point is the generation of very short high-current pulses for high-energy lasers; a demonstration unit is described which employs fast, reverse conducting thyristors from the CSR series. 2000 A / 0.4 us pulses generated with a switching frequency of 5 kHz will allow thyratrons to be replaced in the future by semiconductors which can switch a virtually unlimited number of pulses with high efficiency.

   POWER ELECTRONICS, FROM THE DISCRETE COMPONENT TO THE FUNCTION
By Jean-Marie Peter; Bruno Nadd [View]
[Download]

Abstract: The advent of a new technology allowing the integration on the same silicon chip of power devices along with signal processing circuitry offers new opportunities. This paper reports the developpment of a 500V self protecting MOS transistor prototype. It gives also an overview of future developments in this area.

   NEW MANUFACTURING METHODS LEAD TO A BREAK-THROUGH IN THYRISTOR-TECHNOLOGY
By O. Leisten; M. Taube [View]
[Download]

Abstract: Modern manufacturing technology combined with new concepts in semiconductor design lead to the realization of new 2-inch and 3-inch high voltage phase-control thyristors which will have an increased impact on the design and economics of industrial high power electronic equipment. The advantages of using the concept of free-floating silicon (i.e. the Si-chip is not alloyed and is directly contacted electrically and thermally by pressure alone) specifically for small area thyristors will be described. The improvements of the dynamic and static parameters allow applications up to 300 Hz at Vdrm = 5500 V. Controlled electron irradiation and a novel beveling technique at the rim of the devices are the important features which make up the break- through in thyristor technology. An outlook to future developments and protection schemes will be presented.

   EMITTER SWITCHING HIGH-POWER TRANSISTORS
By F. V. P. Robinson; B. W. Williams [View]
[Download]

Abstract: A high-voltage high-current cascode switch implemented with parallel connected low-voltage MOSFET's as the emitter switch of a high-power bipolar transistor is tested up to 48 kVA and shown to have good turn-off behaviour when switching clamped inductive loads without load-line shaping. Typical waveforms are given and the results of examining turn-off performance over 10-80 A current and 300-600 V voltage ranges, for different drive conditions, are presented. Features of the drive circuit and the optimum drive conditions for minimal storage time and crossover time are discussed.

   NEW METHOD FOR SMART DRIVE OF POWER TRANSISTORS
By M. I. Castro Simas; M. Simoes Piedade [View]
[Download]

Abstract: One of the main challenges originated by the use of the new power transistors in switching power converters is presented by the ever faster commutation of the semiconductor devices embedded in inductive circuits. The fast commutation leads to extremely high voltages in the circuit when transistors are turned off. In this paper, a new method using feedback techniques is presented, which is suitable to drive and protect high power transistors in commutation. This active protection allows the use of the maximum transistor safe operating area, since it prevents the drain to source voltage from rising above a prescribed value. One aditional advantage of this drive technique consists in the reduction of the turn-on time of the MOS transistor due to an inherent increase of the driving current. Other features, such as overcurrent and overtemperature protection, are also easily included in the drive circuit. The new approach permits faster, lighter and more efficient circuits, compared with the conventional clampers and snubbers (McMurray, 1979). Furthermore the proposed method can be implemented either on the same chip with the power transistor, or in a separate drive circuit and both realized in bipolar or MOS double-polysilicon technologies using the new Smart Power Techniques (Rossel and Buxo, 1985).

   SEMICONDUCTOR DEVICE FOR FAST SUBMEGAMPERE SWITCHING AND HIGH FREQUENCY OPERATING
By I. V. Grekhov [View]
[Download]

Abstract: A principle of semiconductor switch control involving the near-collector plasma layer created uniformly over the device area is discussed. The most convential method of producing this layer is reversible injection control. Pulsed thyristor-type devices with reversible injection control switch currents > 270kA with rise rates in excess of 75kA/us the high frequency devices operating at 100 kHz and more.These devices may prove to be a viable alternative to power thyristors, power field and bipolar transistors and GTOs.

EPE 1987 - 02 - Lecture Session 1.02: COMPONENTS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1987 - Conference > EPE 1987 - 02 - Lecture Session 1.02: COMPONENTS
	[return to parent folder]

	FAST SWITCHING THYRISTORS REPLACE THYRATRONS IN HIGH-CURRENT PULSE APPLICATIONS By J.-L. Steiner; A. Schweizer; J. Vitins	[View] [Download]
Abstract: Continuing development of power semiconductor devices is extending their range of application to completely new fields, as well as areas in which components such as electron tubes have previously been used. A case in point is the generation of very short high-current pulses for high-energy lasers; a demonstration unit is described which employs fast, reverse conducting thyristors from the CSR series. 2000 A / 0.4 us pulses generated with a switching frequency of 5 kHz will allow thyratrons to be replaced in the future by semiconductors which can switch a virtually unlimited number of pulses with high efficiency.

	POWER ELECTRONICS, FROM THE DISCRETE COMPONENT TO THE FUNCTION By Jean-Marie Peter; Bruno Nadd	[View] [Download]
Abstract: The advent of a new technology allowing the integration on the same silicon chip of power devices along with signal processing circuitry offers new opportunities. This paper reports the developpment of a 500V self protecting MOS transistor prototype. It gives also an overview of future developments in this area.

	NEW MANUFACTURING METHODS LEAD TO A BREAK-THROUGH IN THYRISTOR-TECHNOLOGY By O. Leisten; M. Taube	[View] [Download]
Abstract: Modern manufacturing technology combined with new concepts in semiconductor design lead to the realization of new 2-inch and 3-inch high voltage phase-control thyristors which will have an increased impact on the design and economics of industrial high power electronic equipment. The advantages of using the concept of free-floating silicon (i.e. the Si-chip is not alloyed and is directly contacted electrically and thermally by pressure alone) specifically for small area thyristors will be described. The improvements of the dynamic and static parameters allow applications up to 300 Hz at Vdrm = 5500 V. Controlled electron irradiation and a novel beveling technique at the rim of the devices are the important features which make up the break- through in thyristor technology. An outlook to future developments and protection schemes will be presented.

	EMITTER SWITCHING HIGH-POWER TRANSISTORS By F. V. P. Robinson; B. W. Williams	[View] [Download]
Abstract: A high-voltage high-current cascode switch implemented with parallel connected low-voltage MOSFET's as the emitter switch of a high-power bipolar transistor is tested up to 48 kVA and shown to have good turn-off behaviour when switching clamped inductive loads without load-line shaping. Typical waveforms are given and the results of examining turn-off performance over 10-80 A current and 300-600 V voltage ranges, for different drive conditions, are presented. Features of the drive circuit and the optimum drive conditions for minimal storage time and crossover time are discussed.

	NEW METHOD FOR SMART DRIVE OF POWER TRANSISTORS By M. I. Castro Simas; M. Simoes Piedade	[View] [Download]
Abstract: One of the main challenges originated by the use of the new power transistors in switching power converters is presented by the ever faster commutation of the semiconductor devices embedded in inductive circuits. The fast commutation leads to extremely high voltages in the circuit when transistors are turned off. In this paper, a new method using feedback techniques is presented, which is suitable to drive and protect high power transistors in commutation. This active protection allows the use of the maximum transistor safe operating area, since it prevents the drain to source voltage from rising above a prescribed value. One aditional advantage of this drive technique consists in the reduction of the turn-on time of the MOS transistor due to an inherent increase of the driving current. Other features, such as overcurrent and overtemperature protection, are also easily included in the drive circuit. The new approach permits faster, lighter and more efficient circuits, compared with the conventional clampers and snubbers (McMurray, 1979). Furthermore the proposed method can be implemented either on the same chip with the power transistor, or in a separate drive circuit and both realized in bipolar or MOS double-polysilicon technologies using the new Smart Power Techniques (Rossel and Buxo, 1985).

	SEMICONDUCTOR DEVICE FOR FAST SUBMEGAMPERE SWITCHING AND HIGH FREQUENCY OPERATING By I. V. Grekhov	[View] [Download]
Abstract: A principle of semiconductor switch control involving the near-collector plasma layer created uniformly over the device area is discussed. The most convential method of producing this layer is reversible injection control. Pulsed thyristor-type devices with reversible injection control switch currents > 270kA with rise rates in excess of 75kA/us the high frequency devices operating at 100 kHz and more.These devices may prove to be a viable alternative to power thyristors, power field and bipolar transistors and GTOs.