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NEW MANUFACTURING METHODS LEAD TO A BREAK-THROUGH IN THYRISTOR-TECHNOLOGY
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| Author(s) |
O. Leisten; M. Taube |
| Abstract |
Modern manufacturing technology combined with new concepts in semiconductor design lead to the realization of new 2-inch and 3-inch high voltage phase-control thyristors which will have an increased impact on the design and economics of industrial high power electronic equipment. The advantages of using the concept of free-floating silicon (i.e. the Si-chip is not alloyed and is directly contacted electrically and thermally by pressure alone) specifically for small area thyristors will be described. The improvements of the dynamic and static parameters allow applications up to 300 Hz at Vdrm = 5500 V. Controlled electron irradiation and a novel beveling technique at the rim of the devices are the important features which make up the break- through in thyristor technology. An outlook to future developments and protection schemes will be presented. |
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| Filename: | Unnamed file |
| Filesize: | 2.257 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-03-03 by System |
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