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SEMICONDUCTOR DEVICE FOR FAST SUBMEGAMPERE SWITCHING AND HIGH FREQUENCY OPERATING
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| Author(s) |
I. V. Grekhov |
| Abstract |
A principle of semiconductor switch control involving the near-collector plasma layer created uniformly over the device area is discussed. The most convential method of producing this layer is reversible injection control. Pulsed thyristor-type devices with reversible injection control switch currents > 270kA with rise rates in excess of 75kA/us the high frequency devices operating at 100 kHz and more.These devices may prove to be a viable alternative to power thyristors, power field and bipolar transistors and GTOs. |
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| Filename: | Unnamed file |
| Filesize: | 1.8 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-03-03 by System |
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