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EMITTER SWITCHING HIGH-POWER TRANSISTORS
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| Author(s) |
F. V. P. Robinson; B. W. Williams |
| Abstract |
A high-voltage high-current cascode switch implemented with parallel connected low-voltage MOSFET's as the emitter switch of a high-power bipolar transistor is tested up to 48 kVA and shown to have good turn-off behaviour when switching clamped inductive loads without load-line shaping. Typical waveforms are given and the results of examining turn-off performance over 10-80 A current and 300-600 V voltage ranges, for different drive conditions, are presented. Features of the drive circuit and the optimum drive conditions for minimal storage time and crossover time are discussed. |
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| Filename: | Unnamed file |
| Filesize: | 2.455 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-03-03 by System |
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