EPE Association: EPE 1989 - 04 - Lecture Session 1.4: POWER ELECTRONICS DEVICES

EPE 1989 - 04 - Lecture Session 1.4: POWER ELECTRONICS DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1989 - Conference > EPE 1989 - 04 - Lecture Session 1.4: POWER ELECTRONICS DEVICES

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   COMPARATIVE STUDY ON NEW POWER TRANSISTORS WITH RESPECT TO HIGH FREQUENCY INVERTER APPLICATIONS
By K. Heumann; G. Papp; M. Jung [View]
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Abstract: New power devices - IGBT and bipolar transistor with cellular structure - are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000V / 100A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result, IGBTs need simple gate drive circuits, but operating frequency at rated current is lower than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex.

   THE INNOVATION IN THE FIELD OF HIGH VOLTAGE BIPOLAR TRANSISTOR
By Pierre A. Aloisi [View]
[Download]

Abstract: The power mosfet technology gives a lot of new possibilities in the low and medium voltage application field:
- High switching speed for low volume, efficient applications,
- Power switches easy to design and to drive.
In the range of medium and high voltage and medium and high power applicatlon, the same type of requests come up for the bipolar devices:
- Increase of the device ruggedness by increasing the safe operating areas
- Capability to sustain accidental overloads or energy discharge from the parasitic inductances
- Improvement the device switching speed to increase the working system frequency
- Narrowing of the electrical parameter distribution
- Capability to drive products easily
And also, improve the best characteristics of the bipolar devices:
- The saturation voltage
- Decrease the die cost by an easy manufacturing and process control.

   TRANSISTORIZED POWER SWITCHES WITH IMPROVED EFFICIENCY
By M. Bildgen; K. Rischmüller [View]
[Download]

Abstract: Loss reduction is an important objective for power electronic design. The output characteristics of Bipolar and MOS power stages are analysed and the limits for further on-state loss reduction are indicated. A fast high-voltage driver/switch combination with very low on-state and switching losses is described. The switch is designed with cellular bipolar-junction-transistors driven by a smart power switch-mode regulator. The driver handles duty cycles from 0 ... 100 % and requires only one unregulated auxiliary supply. The static and dynamic behavior of the switch and its new driver stage are shown and discussed. The switch exhibits low losses and is able to operate with unaudible switching frequencies on the rectified mains.

   DESIGN AND CHARACTERIZATION OF GTO DEVICES FOR MEDIUM FREQUENCY APPLICATIONS
By Luigi Malesani; Leopoldo Rossetto; Paolo Tenti; Richard J. Morris; Frank J. Wakeman [View]
[Download]

Abstract: In the paper the performance of some new GTO devices developed for the use in resonant or soft-switched converters for medium frequency applications is investigated. Modifications of the GTO fabrication process are discussed, which improve the device performance in this environment. The behaviour of several standard and modified devices was analysed, by means of a suitable test circuit, showing that the energy loss per cycle can be considerably lowered by a proper design of the device and driver circuit . Accordingly, the useful frequency range of the GTO can be increased up to 50kHz, without significant power derating.

   A NEW REVERSE CONDUCTING GTO
By M. lshidoh; M. Yamamoto; T. Nakagawa; F. Tokunoh [View]
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Abstract: A new reverse conducting GTO, rated 4.5kV/3kA and having a turn-off capability and frequency performance two time that of conventional GTOs technology and p-i-n constraction. This paper describes the adopted technology and the performances of this newly developed reverse conducting GTO.

   QUASI-THREE DIMENSIONAL ANALYSIS OF SWITCHING PROCESSES IN TURN-OFF THYRISTORS
By E. Masada; H. Ohsaki; T. Nakajima; M. Tamura [View]
[Download]

Abstract: Switching processes in the buried gate GTO's and static induction thyristors are numerically analyzed and compared with experimental results. To evaluate three dimensional structure of them, a quasi-three dimensional computation scheme is introduced. Cross sections of a device in rectangular directions are used as a two-dimensional model to be analysed. Carrier distributions in both cross sections are connected to each other. The gate layer made with epitaxial growth is modelled as a non-rectangular boundary. Combined with irregular mesh approach both in space and time difference, the scheme gives an efficient result in calculation. They are utilized in the device design and verified qualitatively with experiments.

EPE 1989 - 04 - Lecture Session 1.4: POWER ELECTRONICS DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1989 - Conference > EPE 1989 - 04 - Lecture Session 1.4: POWER ELECTRONICS DEVICES
	[return to parent folder]

	COMPARATIVE STUDY ON NEW POWER TRANSISTORS WITH RESPECT TO HIGH FREQUENCY INVERTER APPLICATIONS By K. Heumann; G. Papp; M. Jung	[View] [Download]
Abstract: New power devices - IGBT and bipolar transistor with cellular structure - are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000V / 100A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result, IGBTs need simple gate drive circuits, but operating frequency at rated current is lower than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex.

	THE INNOVATION IN THE FIELD OF HIGH VOLTAGE BIPOLAR TRANSISTOR By Pierre A. Aloisi	[View] [Download]
Abstract: The power mosfet technology gives a lot of new possibilities in the low and medium voltage application field: - High switching speed for low volume, efficient applications, - Power switches easy to design and to drive. In the range of medium and high voltage and medium and high power applicatlon, the same type of requests come up for the bipolar devices: - Increase of the device ruggedness by increasing the safe operating areas - Capability to sustain accidental overloads or energy discharge from the parasitic inductances - Improvement the device switching speed to increase the working system frequency - Narrowing of the electrical parameter distribution - Capability to drive products easily And also, improve the best characteristics of the bipolar devices: - The saturation voltage - Decrease the die cost by an easy manufacturing and process control.

	TRANSISTORIZED POWER SWITCHES WITH IMPROVED EFFICIENCY By M. Bildgen; K. Rischmüller	[View] [Download]
Abstract: Loss reduction is an important objective for power electronic design. The output characteristics of Bipolar and MOS power stages are analysed and the limits for further on-state loss reduction are indicated. A fast high-voltage driver/switch combination with very low on-state and switching losses is described. The switch is designed with cellular bipolar-junction-transistors driven by a smart power switch-mode regulator. The driver handles duty cycles from 0 ... 100 % and requires only one unregulated auxiliary supply. The static and dynamic behavior of the switch and its new driver stage are shown and discussed. The switch exhibits low losses and is able to operate with unaudible switching frequencies on the rectified mains.

	DESIGN AND CHARACTERIZATION OF GTO DEVICES FOR MEDIUM FREQUENCY APPLICATIONS By Luigi Malesani; Leopoldo Rossetto; Paolo Tenti; Richard J. Morris; Frank J. Wakeman	[View] [Download]
Abstract: In the paper the performance of some new GTO devices developed for the use in resonant or soft-switched converters for medium frequency applications is investigated. Modifications of the GTO fabrication process are discussed, which improve the device performance in this environment. The behaviour of several standard and modified devices was analysed, by means of a suitable test circuit, showing that the energy loss per cycle can be considerably lowered by a proper design of the device and driver circuit . Accordingly, the useful frequency range of the GTO can be increased up to 50kHz, without significant power derating.

	A NEW REVERSE CONDUCTING GTO By M. lshidoh; M. Yamamoto; T. Nakagawa; F. Tokunoh	[View] [Download]
Abstract: A new reverse conducting GTO, rated 4.5kV/3kA and having a turn-off capability and frequency performance two time that of conventional GTOs technology and p-i-n constraction. This paper describes the adopted technology and the performances of this newly developed reverse conducting GTO.

	QUASI-THREE DIMENSIONAL ANALYSIS OF SWITCHING PROCESSES IN TURN-OFF THYRISTORS By E. Masada; H. Ohsaki; T. Nakajima; M. Tamura	[View] [Download]
Abstract: Switching processes in the buried gate GTO's and static induction thyristors are numerically analyzed and compared with experimental results. To evaluate three dimensional structure of them, a quasi-three dimensional computation scheme is introduced. Cross sections of a device in rectangular directions are used as a two-dimensional model to be analysed. Carrier distributions in both cross sections are connected to each other. The gate layer made with epitaxial growth is modelled as a non-rectangular boundary. Combined with irregular mesh approach both in space and time difference, the scheme gives an efficient result in calculation. They are utilized in the device design and verified qualitatively with experiments.