| Abstract |
New power devices - IGBT and bipolar transistor with cellular structure - are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000V / 100A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result, IGBTs need simple gate drive circuits, but operating frequency at rated current is lower than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular
transistor is more complex. |
