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QUASI-THREE DIMENSIONAL ANALYSIS OF SWITCHING PROCESSES IN TURN-OFF THYRISTORS
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| Author(s) |
E. Masada; H. Ohsaki; T. Nakajima; M. Tamura |
| Abstract |
Switching processes in the buried gate GTO's and static induction thyristors are numerically analyzed and compared with experimental results. To evaluate three dimensional structure of them, a quasi-three dimensional computation scheme is introduced. Cross sections of a device in rectangular directions are used as a two-dimensional model to be analysed. Carrier distributions in both cross sections are connected to each other. The gate layer made with epitaxial growth is modelled as a non-rectangular boundary. Combined with irregular mesh approach both in space and time difference, the scheme gives an efficient result in calculation. They are utilized in the device design and verified qualitatively with experiments. |
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| Filename: | Unnamed file |
| Filesize: | 3.146 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-11 by System |
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