EPE Association: EPE 2019 - DS2a: Active Devices and Components (Si)

EPE 2019 - DS2a: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2019 ECCE Europe - Conference > EPE 2019 - Topic 01: Devices, Packaging and System Integration > EPE 2019 - DS2a: Active Devices and Components (Si)

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   GaN-Based Active Gate-Drive Unit for IGBTs in Medium-Voltage Applications
By Steffen BEUSHAUSEN [View]
[Download]

Abstract: In this work, the concept and experimental verification of a GaN-based active gate-drive unit to control the switching transients of medium-voltage (MV) IGBTs are presented.The driving stage consists of a half-bridge with GaN HEMTs operated at switching frequencies between 20 and 30 MHz.Using the GaN half-bridge as a buck converter, the gate voltage of MV-IGBTs can be set dynamically during the switching transients.With an adjustable gate voltage during the switching transients, the current and voltage slopes of the IGBT can be manipulated.Optimizing the current slope during turn-on can significantly reduce the turn-on loss, while still maintaining the same reverse recovery of an anti-parallel diode compared to a conventional gate-drive unit.For the experimental verification of the active gate-drive unit presented in this work, an improved turn-on with a switching loss reduction of up to 20\% is achieved.

   LASER TRIGGERING OF SOLID-STATE SWITCHES
By Janusz RODZIEWICZ [View]
[Download]

Abstract: A theoretical and experimental investigation has been made into the laser activated Silicon ControlledRecti_er (SCR) turn-on process. Thanks to the measurement of illumination pro_le of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated con_guration will be demonstrated; 6-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 40 times at low pulse repetition rate, without destroying the device.

   Low Voltage Trench-Gate MOSFET Power Losses Optimization in Synchronous Buck Converter Applications
By Salvatore MUSUMECI [View]
[Download]

Abstract: The paper deals with the optimal selection of low side and high side switches, in a synchronous buck converter, based on energy losses as well as dynamic switching characteristics as focused parameters. The MOSFET in trench-gate technology investigated is based on a strip-geometry layout which allows an excellent trade-off between the on-resistance and the gate charge. In the proposed paper main technology issues are shortly recalled and the advantages deriving from the improved device are focused. Furthermore, the switching behavior in actual synchronous buck converter circuit applied as a power supply for auxiliary electronic automotive accessories has been evaluated. Last generation trench-gate MOSFET at different current ratings are tested in order to give evidence to the effectiveness improvements achieved by using the selection of correct devices. Finally, experimental results on the converter performances such as switching transients, power losses and thermal behavior are carried out.

   Monolithic Asymmetric switching cells integrated on vertical multi-terminal Si Power chips
By Abdelhakim BOURENNANE [View]
[Download]

Abstract: Power electronic converters (power modules) are essential devices for high efficient power management. Applications are ever more demanding in terms of compactness, reliability and cost reduction with increased intrinsic performance. The current technology of standard power modules, that use IGBT chips, is reaching its limits and the margins for improvement do not allow to meet the short-term emerging needs. Indeed, in a standard power module, each switching cell requires the manufacture of two chips and two wirebonds for interconnections. Each wirebond is a source of stray inductance and constitutes a limiting factor of electrical performance, a source of an increase in the level of electrical stress and of reliability problems. It is customary to place a decoupling capacitor on the power supply terminals of the switching cell. This capacitor makes it possible to compensate the stray inductance prior to the switching cell but it doesn't compensate in any way the stray inductance within the switching cell. This paper proposes for the first time a concept of an ultimate monolithic wire-bondless switching cell that allows to suppress the wirebonds within the switching cell and therefore minimizes the stray inductance value. Consequently, it is suited for the emerging applications requiring to achieve simultaneously: reliability, compactness, intrinsic performance and reduced manufacturing cost.

   Mutual influence of quasistatic and dynamic current imbalances of paralleled IGBTs
By Robin WERNER [View]
[Download]

Abstract: Static and quasistatic current imbalances of paralleled IGBTs and their free-wheeling diodes not only cause unbalanced ON-state losses but can affect current sharing during switching transients. Further, dynamic current imbalances can lead to quasistatic current imbalances. These mutual influences are analysed by TCAD-simulations and measurementsof high voltage IGBTs.

   Optimizing Properties of Fast IGBT and FRD with Partially Diffused Proton Beam Irradiation
By Alexey SURMA [View]
[Download]

Abstract: The paper addresses a possibility to optimize frequency properties of IGBT and FRD using irradiation with a partially diffused proton beam, introducing a method to produce fast and ultrafast modules for operation in 10-50 kHz frequency range.

   Overvoltage Short-Circuit Failures in Three-Level ANPC Converters
By David HAMMES [View]
[Download]

Abstract: Three-level converters, like the Active-Neutral-Point-Clamped type, can experience in certain situations a shorten semiconductor, which leads immediately to an overvoltage problem for another switch with the whole DC-link voltage. As a result, this one also breaks through or otherwise has to be saved by a fast voltage clamping. However, this leads into a high inductive novel short-circuit current path for three semiconductors in series. Depending on the state of a fourth switch, a second low-inductive short can occur, which affects the trends for voltages and currents of the other three switches as well.

   Performance Modulation of Reverse Conducting IGBT through Gate-Voltage Adjustment in Diode Conduction Mode
By Daniel LEXOW [View]
[Download]

Abstract: While driving an RC-IGBT in diode conduction mode, the applied gate-emitter voltage is directly in-fluencing the electron-hole plasma in the device. Thus, diode ON-state losses as well as the reverse-recovery behavior - tail and peak current - can be easily manipulated in order to suit specific inverter applications.

   The ETO-IGBT - A Dual-Concept of Thyristor and Transistor Power Devices
By Jakob TEICHRIB [View]
[Download]

Abstract: The performance of inverters strongly depends on the characteristics of the employed semiconductordevices. Bound to a trade-off between conduction- and switching-optimization, these devices requirea decision for the optimal loss balance. In this work, a new medium-voltage semiconductor deviceconsisting of both thyristor-based and transistor-based components is proposed. The goal is reduction of losses in both conduction and switching domain. The circuitry and switching pattern is described and the improvement of overall losses is investigated by FEM-simulation to give an theoretical outlook on the bene_ts of the device. A selection of parameters is adapted to analyze the impact on the performance. It is shown that the overall losses can be signi_cantly reduced by minor substitution of Gate-Commutated Thyristor (GCT) silicon area with that of Insulated-Gate Bipolar Transistor (IGBT).

EPE 2019 - DS2a: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2019 ECCE Europe - Conference > EPE 2019 - Topic 01: Devices, Packaging and System Integration > EPE 2019 - DS2a: Active Devices and Components (Si)
	[return to parent folder]

	GaN-Based Active Gate-Drive Unit for IGBTs in Medium-Voltage Applications By Steffen BEUSHAUSEN	[View] [Download]
Abstract: In this work, the concept and experimental verification of a GaN-based active gate-drive unit to control the switching transients of medium-voltage (MV) IGBTs are presented.The driving stage consists of a half-bridge with GaN HEMTs operated at switching frequencies between 20 and 30 MHz.Using the GaN half-bridge as a buck converter, the gate voltage of MV-IGBTs can be set dynamically during the switching transients.With an adjustable gate voltage during the switching transients, the current and voltage slopes of the IGBT can be manipulated.Optimizing the current slope during turn-on can significantly reduce the turn-on loss, while still maintaining the same reverse recovery of an anti-parallel diode compared to a conventional gate-drive unit.For the experimental verification of the active gate-drive unit presented in this work, an improved turn-on with a switching loss reduction of up to 20\% is achieved.

	LASER TRIGGERING OF SOLID-STATE SWITCHES By Janusz RODZIEWICZ	[View] [Download]
Abstract: A theoretical and experimental investigation has been made into the laser activated Silicon ControlledRecti_er (SCR) turn-on process. Thanks to the measurement of illumination pro_le of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated con_guration will be demonstrated; 6-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 40 times at low pulse repetition rate, without destroying the device.

	Low Voltage Trench-Gate MOSFET Power Losses Optimization in Synchronous Buck Converter Applications By Salvatore MUSUMECI	[View] [Download]
Abstract: The paper deals with the optimal selection of low side and high side switches, in a synchronous buck converter, based on energy losses as well as dynamic switching characteristics as focused parameters. The MOSFET in trench-gate technology investigated is based on a strip-geometry layout which allows an excellent trade-off between the on-resistance and the gate charge. In the proposed paper main technology issues are shortly recalled and the advantages deriving from the improved device are focused. Furthermore, the switching behavior in actual synchronous buck converter circuit applied as a power supply for auxiliary electronic automotive accessories has been evaluated. Last generation trench-gate MOSFET at different current ratings are tested in order to give evidence to the effectiveness improvements achieved by using the selection of correct devices. Finally, experimental results on the converter performances such as switching transients, power losses and thermal behavior are carried out.

	Monolithic Asymmetric switching cells integrated on vertical multi-terminal Si Power chips By Abdelhakim BOURENNANE	[View] [Download]
Abstract: Power electronic converters (power modules) are essential devices for high efficient power management. Applications are ever more demanding in terms of compactness, reliability and cost reduction with increased intrinsic performance. The current technology of standard power modules, that use IGBT chips, is reaching its limits and the margins for improvement do not allow to meet the short-term emerging needs. Indeed, in a standard power module, each switching cell requires the manufacture of two chips and two wirebonds for interconnections. Each wirebond is a source of stray inductance and constitutes a limiting factor of electrical performance, a source of an increase in the level of electrical stress and of reliability problems. It is customary to place a decoupling capacitor on the power supply terminals of the switching cell. This capacitor makes it possible to compensate the stray inductance prior to the switching cell but it doesn't compensate in any way the stray inductance within the switching cell. This paper proposes for the first time a concept of an ultimate monolithic wire-bondless switching cell that allows to suppress the wirebonds within the switching cell and therefore minimizes the stray inductance value. Consequently, it is suited for the emerging applications requiring to achieve simultaneously: reliability, compactness, intrinsic performance and reduced manufacturing cost.

	Mutual influence of quasistatic and dynamic current imbalances of paralleled IGBTs By Robin WERNER	[View] [Download]
Abstract: Static and quasistatic current imbalances of paralleled IGBTs and their free-wheeling diodes not only cause unbalanced ON-state losses but can affect current sharing during switching transients. Further, dynamic current imbalances can lead to quasistatic current imbalances. These mutual influences are analysed by TCAD-simulations and measurementsof high voltage IGBTs.

	Optimizing Properties of Fast IGBT and FRD with Partially Diffused Proton Beam Irradiation By Alexey SURMA	[View] [Download]
Abstract: The paper addresses a possibility to optimize frequency properties of IGBT and FRD using irradiation with a partially diffused proton beam, introducing a method to produce fast and ultrafast modules for operation in 10-50 kHz frequency range.

	Overvoltage Short-Circuit Failures in Three-Level ANPC Converters By David HAMMES	[View] [Download]
Abstract: Three-level converters, like the Active-Neutral-Point-Clamped type, can experience in certain situations a shorten semiconductor, which leads immediately to an overvoltage problem for another switch with the whole DC-link voltage. As a result, this one also breaks through or otherwise has to be saved by a fast voltage clamping. However, this leads into a high inductive novel short-circuit current path for three semiconductors in series. Depending on the state of a fourth switch, a second low-inductive short can occur, which affects the trends for voltages and currents of the other three switches as well.

	Performance Modulation of Reverse Conducting IGBT through Gate-Voltage Adjustment in Diode Conduction Mode By Daniel LEXOW	[View] [Download]
Abstract: While driving an RC-IGBT in diode conduction mode, the applied gate-emitter voltage is directly in-fluencing the electron-hole plasma in the device. Thus, diode ON-state losses as well as the reverse-recovery behavior - tail and peak current - can be easily manipulated in order to suit specific inverter applications.

	The ETO-IGBT - A Dual-Concept of Thyristor and Transistor Power Devices By Jakob TEICHRIB	[View] [Download]
Abstract: The performance of inverters strongly depends on the characteristics of the employed semiconductordevices. Bound to a trade-off between conduction- and switching-optimization, these devices requirea decision for the optimal loss balance. In this work, a new medium-voltage semiconductor deviceconsisting of both thyristor-based and transistor-based components is proposed. The goal is reduction of losses in both conduction and switching domain. The circuitry and switching pattern is described and the improvement of overall losses is investigated by FEM-simulation to give an theoretical outlook on the bene_ts of the device. A selection of parameters is adapted to analyze the impact on the performance. It is shown that the overall losses can be signi_cantly reduced by minor substitution of Gate-Commutated Thyristor (GCT) silicon area with that of Insulated-Gate Bipolar Transistor (IGBT).