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LASER TRIGGERING OF SOLID-STATE SWITCHES
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| Author(s) |
Janusz RODZIEWICZ |
| Abstract |
A theoretical and experimental investigation has been made into the laser activated Silicon ControlledRecti_er (SCR) turn-on process. Thanks to the measurement of illumination pro_le of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hot spots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated con_guration will be demonstrated; 6-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 40 times at low pulse repetition rate, without destroying the device. |
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| Filename: | 0371-epe2019-full-23415239.pdf |
| Filesize: | 928.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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