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Performance Modulation of Reverse Conducting IGBT through Gate-Voltage Adjustment in Diode Conduction Mode
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| Author(s) |
Daniel LEXOW |
| Abstract |
While driving an RC-IGBT in diode conduction mode, the applied gate-emitter voltage is directly in-fluencing the electron-hole plasma in the device. Thus, diode ON-state losses as well as the reverse-recovery behavior - tail and peak current - can be easily manipulated in order to suit specific inverter applications. |
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| Filename: | 0333-epe2019-full-01021338.pdf |
| Filesize: | 1.641 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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