EPE Association: 15 - Madep - M4.2 - HIGH POWER DEVICES 01

15 - Madep - M4.2 - HIGH POWER DEVICES 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 15 - Madep - M4.2 - HIGH POWER DEVICES 01

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   ELECTRICAL CHARACTERISTICS OF A PNIPN GTO
By Tsutomu Yatsuo; Yukimasa Satou; Susumu Murakami [View]
[Download]

Abstract: To identify the design points of a pnipn GTO with an n+ buffer layer, effects of structural parameters on the electrical characteristics were investigated by using small size test samples. The tailing current for the pnipn device has a relatively large peak value and has a faster decay which is strongly dependent on the n-base thickness as well as the anode shorted emitter. It was confirmed that the pnipn GTO has a considerable advantage over the conventional pnpn GTO for high blocking voltages such as 6kV and above, and only a slight advantage for relatively low blocking voltages less than 4.5 kV. But the gate trigger current for the pnipn device increases sharply on extending the anode shorted emitter.

   A PHYSICAL AND CIRCUIT LEVEL APPROACH FOR MODELING TURN-OFF CHARACTERISTICS OF GTO's
By Ranadeep Dutta; Cheanlung Tsay; Allen Rothwarf; Robert Fischl; Harshad Mehta [View]
[Download]

Abstract: ln this paper, we present physical and circuit models, which are related via their parameters to characterize the gated turn-off characteristics of thyristors. The physical model provides physical insight to the mechanism of turn-off in single islands and investigates analytically, the dependence of storage time on external variables (anode and gate currents) and physical device parameters and dimensions. Such a characterization is useful since the current crowding effect (that limits current controllability in a multi-emitter structure) depends on the turn-off behavior of the unit cells. The circuit level approach provides a model which can be incorporated into CAD programs (such as SPICE) that can be used by application engineers to design a variety of power electronic circuits such as Static Var Compensator (SVC's). The parameters of the circuit model are based on the physical model parameters and thus reflect the physical device properties and dimensions.

   TWO-DIMENSIONAL TURN-OFF PROCESS SIMULATION OF A GTO WITH REALISTIC RLC LOAD
By M. Turowski; A. Napieralski; J. M. Dorkel [View]
[Download]

Abstract: In this paper, a discussion of load circuit influence on internal behaviour of GTO structure and on external wave-forms of the circuit is presented. The simulation was performed with realistic RLC load circuit, and the obtained waveforms were compared with experimental results. Obtained results show that the peak of power density (i.e. possible hot spot) remains located in the same place inside the structure throughout the whole turn-off process. These results show the importance of GTO structure design as a function of external load conditions and the possibility of hot spots occurrence under the cathode contact. The presented numerical results were obtained with the use of a personal computer 2-D device simulation program solving the full set of time dependent semiconductor equations using the finite boxes method.

   6kV 3000A HIGH POWER REVERSE CONDUCTING GTO THYRISTOR
By Yoshikazu Takahashi; Masahide Watanabe; Takeharu Koga; Osamu Yamada; Hideaki Kakiki; Humiaki Kirihata [View]
[Download]

Abstract: A 6kV 3000A high power reverse conducting gate turn-off thyristor (RC-GTO) has been developed. In this paper, we describe a new approach to obtaining the excellent switching performance of the high turn-off capability, the high turn-off gain, and the small turn-on and turn-off energies. A new structure of the segment as a unit GTO, called Distributed Segment Structure (DSS) is proposed. By use of the DSS, the high turn-off capability of 3000A with a small snubber capacitance of 4 μF is achieved and the turn-off gain is improved by about 20% compared to the conventional RC-GTO. Additionally, by adopting our original Al-Ga double diffused p-base profile, the high blocking voltage of 6kV is achieved in maintaining a high electrical separation resistance of more than 100 ohms between the GTO part and the diode part. Using this device, we can realize the compact and low weight inverter system.

   ANALYSIS FOR SERIES CONNECTION OF GTO THYRISTORS
By M. Ishidoh; G. Debled; D. Médaule [View]
[Download]

Abstract: Up to present, GTO thyristors have been used in traction applications and industrial drive systems, but as a result of progress in characteristics, the GTO application field is now expanding to more powerful equipment. For the time being however, the voltage rating of existing GTO thyristors is restrictive, i.e. 4.5 KV compared to required voltages of 9 - 12 KV in high power applications. In order to solve this problem, the GTO characteristic parameters for series connection are analysed. This paper describes the analysis and investigation results and discusses series connection technology devoted to high voltage applications.

   A NEW GATE DRIVE CIRCUIT WITH ENERGY-STORAGE REACTOR DEVELOPED FOR HIGH POWER GTO THYRISTORS
By H. Matsuo; K. Iida; F. Kurokawa; T. Kishimoto; T. Koga [View]
[Download]

Abstract: The majority carrier semiconductor devices such as GTO thyristor, bipolar transistor and so forth are controlled by the current or charge. Therefore, when turning-on or turning-off GTO thyristor quickly, a sufficient amount of charge should be supplied to or removed from the gate of GTO thyristor instantaneously; that is, GTO thyristor should be triggered by the positive or negative high gate current of sharp pulse form to make turn-on time or turn-off time shorter. This paper presents a new gate drive circuit for high power GTO thyristors, in which the energy-storage reactor and the FET switch with fast switched characteristics are employed to make the high gate current of sharp pulse form. First, the proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments. Next, the performance characteristics of this new gate drive circuit is compared with those of the conventional one. As a result, it is clarified that new gate drive circuit is superior to the conventional one in the performance of the gate-driving characteristics, power consumption, size and weight.

15 - Madep - M4.2 - HIGH POWER DEVICES 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 15 - Madep - M4.2 - HIGH POWER DEVICES 01
	[return to parent folder]

	ELECTRICAL CHARACTERISTICS OF A PNIPN GTO By Tsutomu Yatsuo; Yukimasa Satou; Susumu Murakami	[View] [Download]
Abstract: To identify the design points of a pnipn GTO with an n+ buffer layer, effects of structural parameters on the electrical characteristics were investigated by using small size test samples. The tailing current for the pnipn device has a relatively large peak value and has a faster decay which is strongly dependent on the n-base thickness as well as the anode shorted emitter. It was confirmed that the pnipn GTO has a considerable advantage over the conventional pnpn GTO for high blocking voltages such as 6kV and above, and only a slight advantage for relatively low blocking voltages less than 4.5 kV. But the gate trigger current for the pnipn device increases sharply on extending the anode shorted emitter.

	A PHYSICAL AND CIRCUIT LEVEL APPROACH FOR MODELING TURN-OFF CHARACTERISTICS OF GTO's By Ranadeep Dutta; Cheanlung Tsay; Allen Rothwarf; Robert Fischl; Harshad Mehta	[View] [Download]
Abstract: ln this paper, we present physical and circuit models, which are related via their parameters to characterize the gated turn-off characteristics of thyristors. The physical model provides physical insight to the mechanism of turn-off in single islands and investigates analytically, the dependence of storage time on external variables (anode and gate currents) and physical device parameters and dimensions. Such a characterization is useful since the current crowding effect (that limits current controllability in a multi-emitter structure) depends on the turn-off behavior of the unit cells. The circuit level approach provides a model which can be incorporated into CAD programs (such as SPICE) that can be used by application engineers to design a variety of power electronic circuits such as Static Var Compensator (SVC's). The parameters of the circuit model are based on the physical model parameters and thus reflect the physical device properties and dimensions.

	TWO-DIMENSIONAL TURN-OFF PROCESS SIMULATION OF A GTO WITH REALISTIC RLC LOAD By M. Turowski; A. Napieralski; J. M. Dorkel	[View] [Download]
Abstract: In this paper, a discussion of load circuit influence on internal behaviour of GTO structure and on external wave-forms of the circuit is presented. The simulation was performed with realistic RLC load circuit, and the obtained waveforms were compared with experimental results. Obtained results show that the peak of power density (i.e. possible hot spot) remains located in the same place inside the structure throughout the whole turn-off process. These results show the importance of GTO structure design as a function of external load conditions and the possibility of hot spots occurrence under the cathode contact. The presented numerical results were obtained with the use of a personal computer 2-D device simulation program solving the full set of time dependent semiconductor equations using the finite boxes method.

	6kV 3000A HIGH POWER REVERSE CONDUCTING GTO THYRISTOR By Yoshikazu Takahashi; Masahide Watanabe; Takeharu Koga; Osamu Yamada; Hideaki Kakiki; Humiaki Kirihata	[View] [Download]
Abstract: A 6kV 3000A high power reverse conducting gate turn-off thyristor (RC-GTO) has been developed. In this paper, we describe a new approach to obtaining the excellent switching performance of the high turn-off capability, the high turn-off gain, and the small turn-on and turn-off energies. A new structure of the segment as a unit GTO, called Distributed Segment Structure (DSS) is proposed. By use of the DSS, the high turn-off capability of 3000A with a small snubber capacitance of 4 μF is achieved and the turn-off gain is improved by about 20% compared to the conventional RC-GTO. Additionally, by adopting our original Al-Ga double diffused p-base profile, the high blocking voltage of 6kV is achieved in maintaining a high electrical separation resistance of more than 100 ohms between the GTO part and the diode part. Using this device, we can realize the compact and low weight inverter system.

	ANALYSIS FOR SERIES CONNECTION OF GTO THYRISTORS By M. Ishidoh; G. Debled; D. Médaule	[View] [Download]
Abstract: Up to present, GTO thyristors have been used in traction applications and industrial drive systems, but as a result of progress in characteristics, the GTO application field is now expanding to more powerful equipment. For the time being however, the voltage rating of existing GTO thyristors is restrictive, i.e. 4.5 KV compared to required voltages of 9 - 12 KV in high power applications. In order to solve this problem, the GTO characteristic parameters for series connection are analysed. This paper describes the analysis and investigation results and discusses series connection technology devoted to high voltage applications.

	A NEW GATE DRIVE CIRCUIT WITH ENERGY-STORAGE REACTOR DEVELOPED FOR HIGH POWER GTO THYRISTORS By H. Matsuo; K. Iida; F. Kurokawa; T. Kishimoto; T. Koga	[View] [Download]
Abstract: The majority carrier semiconductor devices such as GTO thyristor, bipolar transistor and so forth are controlled by the current or charge. Therefore, when turning-on or turning-off GTO thyristor quickly, a sufficient amount of charge should be supplied to or removed from the gate of GTO thyristor instantaneously; that is, GTO thyristor should be triggered by the positive or negative high gate current of sharp pulse form to make turn-on time or turn-off time shorter. This paper presents a new gate drive circuit for high power GTO thyristors, in which the energy-storage reactor and the FET switch with fast switched characteristics are employed to make the high gate current of sharp pulse form. First, the proposed gate drive circuit is analyzed and its usefulness is confirmed by experiments. Next, the performance characteristics of this new gate drive circuit is compared with those of the conventional one. As a result, it is clarified that new gate drive circuit is superior to the conventional one in the performance of the gate-driving characteristics, power consumption, size and weight.