| |
ELECTRICAL CHARACTERISTICS OF A PNIPN GTO
| [View]
[Download]
|
| Author(s) |
Tsutomu Yatsuo; Yukimasa Satou; Susumu Murakami |
| Abstract |
To identify the design points of a pnipn GTO with an n+ buffer layer, effects of structural parameters on the electrical characteristics were investigated by using small size test samples. The tailing current for the pnipn device has a relatively large peak value and has a faster decay which is strongly dependent on the n-base thickness as well as the anode shorted emitter. It was confirmed that the pnipn GTO has a considerable advantage over the conventional pnpn GTO for high blocking voltages such as 6kV and above, and only a slight advantage for relatively low blocking voltages less than 4.5 kV. But the gate trigger current for the pnipn device increases sharply on extending the anode shorted emitter. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 2.532 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
| |
 |