| Abstract |
A 6kV 3000A high power reverse conducting gate turn-off thyristor (RC-GTO) has been developed. In this paper, we describe a new approach to obtaining the excellent switching performance of the high turn-off capability, the high turn-off gain, and the small turn-on and turn-off energies. A new structure of the segment as a unit GTO, called Distributed Segment Structure (DSS) is proposed. By use of the DSS, the high turn-off capability of 3000A with a small snubber capacitance of 4 μF is achieved and the turn-off gain is improved by about 20% compared to the conventional RC-GTO. Additionally, by adopting our original Al-Ga double diffused p-base profile, the high blocking voltage of 6kV is achieved in maintaining a high electrical separation resistance of more than 100 ohms between the GTO part and the diode part. Using this device, we can realize the compact and low weight inverter system. |
