EPE Association: 13 - Madep - M3.3

13 - Madep - M3.3 - DEVICES MODELING 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 13 - Madep - M3.3 - DEVICES MODELING 02

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   Application of an lntegral Calculation Method to the External Circuit Equation in Two-Dimensional Device Simulator
By N. Iwamuro; S. Tagami [View]
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Abstract: The two-dimensional power device simulator considering an integral circuit equation is developed. This simulator has the features of achieving a fast and stable calculation even when the physical variables vary radically, just like a turn-off performance with an inductive load of power devices. We applied this to investigate the reverse recovery process of pin diode and the turn-off phenomenon of IGBT with an inductive load and got the calculated waveform which agree qualitatively well with the experimental results. And, using this simulator, we can calculate the dissipated turn-off loss or RBSOA of power devices.

   STUDY OF SWITCHING CHARACTERISTICS OF GTO WITH SPICE MODEL
By Satoshi Miyazaki; Tatsuhito Nakajima; Eisuke Masada [View]
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Abstract: This paper describes the static and switching characteristics of the Gate Turn Off Thyristor (GTO) analyzed with a SPICE model. Taking wide use into consideration, PSpice has been chosen among the SPICE "family". The examined GTO has an anode short emitter structure, and its repetitive peak off-state voltage is 1200V , repetitive controllable on-state current 20A respectively . An equivalent circuit of the GTO model is one dimensional and derived from the transistor model of the Gummel-Poon scheme considering impurity concentration and structure of the device. For the purpose of evaluating the device model, some measurements of the device characteristics such as the on-state voltage, holding current, gate trigger current and turn-off time are performed. Finally, the measured and calculated results are compared and it is verified that they show sufficient agreement.

   USER-FRIENDLY HIGH POWER BIPOLAR TRANSISTOR MODEL FOR C.A.D.
By J. Jalade; A. Napieralski; K. Benchaib [View]
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Abstract: The present high signal models tor bipolar power transistors contain numerous crystal structure parameters, unknown to the user. Practically, the usefulness and user-friendlyness of a model greatly depends on the ease with which its parameters can be determined. This article defines a simplified model, adapted to the commutation functioning, based on the equations of the physics describing the functioning of the semiconductor. The values of the components of the equivalent schema can be deduced from a limited number of crystal parameters, identified from the data sheets.

   Power Devices Modeling: Analytic and Numeric Avalanche Breakdown Criteria
By M. A. Bouanane; G. Charitat; P. Rossel [View]
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Abstract: For high voltage devices the main breakdown phenomenon is caused by avalanche multiplication inside a reverse biased junction. We present, in this paper, an evaluation of avalanche breakdown criterion which can be used to predict the voltage handling capability of the device. The analytic and numeric methods, based on the ionization integral calculus, are compared.

   THERMAL IMPEDANCE OF A POWER PLASTIC-PACKAGE
By C. Casarosa; P. Di Barba; A. Savini; G. Ferla; A. Galluzzo; M. Mangiagli [View]
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Abstract: The thermal model of a new plastic-package is presented, with the aim of interpreting experimental results in terms of transient thermal impedance. The model is able to explain, in particular, the dispersion of experimental data which has been observed for a set of real-life samples during the first part of the thermal transient. Such a dispersion is attributed to the presence of voids, due to manufacturing defects, in the soldering layer between die and frame.

13 - Madep - M3.3 - DEVICES MODELING 02
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 13 - Madep - M3.3 - DEVICES MODELING 02
	[return to parent folder]

	Application of an lntegral Calculation Method to the External Circuit Equation in Two-Dimensional Device Simulator By N. Iwamuro; S. Tagami	[View] [Download]
Abstract: The two-dimensional power device simulator considering an integral circuit equation is developed. This simulator has the features of achieving a fast and stable calculation even when the physical variables vary radically, just like a turn-off performance with an inductive load of power devices. We applied this to investigate the reverse recovery process of pin diode and the turn-off phenomenon of IGBT with an inductive load and got the calculated waveform which agree qualitatively well with the experimental results. And, using this simulator, we can calculate the dissipated turn-off loss or RBSOA of power devices.

	STUDY OF SWITCHING CHARACTERISTICS OF GTO WITH SPICE MODEL By Satoshi Miyazaki; Tatsuhito Nakajima; Eisuke Masada	[View] [Download]
Abstract: This paper describes the static and switching characteristics of the Gate Turn Off Thyristor (GTO) analyzed with a SPICE model. Taking wide use into consideration, PSpice has been chosen among the SPICE "family". The examined GTO has an anode short emitter structure, and its repetitive peak off-state voltage is 1200V , repetitive controllable on-state current 20A respectively . An equivalent circuit of the GTO model is one dimensional and derived from the transistor model of the Gummel-Poon scheme considering impurity concentration and structure of the device. For the purpose of evaluating the device model, some measurements of the device characteristics such as the on-state voltage, holding current, gate trigger current and turn-off time are performed. Finally, the measured and calculated results are compared and it is verified that they show sufficient agreement.

	USER-FRIENDLY HIGH POWER BIPOLAR TRANSISTOR MODEL FOR C.A.D. By J. Jalade; A. Napieralski; K. Benchaib	[View] [Download]
Abstract: The present high signal models tor bipolar power transistors contain numerous crystal structure parameters, unknown to the user. Practically, the usefulness and user-friendlyness of a model greatly depends on the ease with which its parameters can be determined. This article defines a simplified model, adapted to the commutation functioning, based on the equations of the physics describing the functioning of the semiconductor. The values of the components of the equivalent schema can be deduced from a limited number of crystal parameters, identified from the data sheets.

	Power Devices Modeling: Analytic and Numeric Avalanche Breakdown Criteria By M. A. Bouanane; G. Charitat; P. Rossel	[View] [Download]
Abstract: For high voltage devices the main breakdown phenomenon is caused by avalanche multiplication inside a reverse biased junction. We present, in this paper, an evaluation of avalanche breakdown criterion which can be used to predict the voltage handling capability of the device. The analytic and numeric methods, based on the ionization integral calculus, are compared.

	THERMAL IMPEDANCE OF A POWER PLASTIC-PACKAGE By C. Casarosa; P. Di Barba; A. Savini; G. Ferla; A. Galluzzo; M. Mangiagli	[View] [Download]
Abstract: The thermal model of a new plastic-package is presented, with the aim of interpreting experimental results in terms of transient thermal impedance. The model is able to explain, in particular, the dispersion of experimental data which has been observed for a set of real-life samples during the first part of the thermal transient. Such a dispersion is attributed to the presence of voids, due to manufacturing defects, in the soldering layer between die and frame.