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Power Devices Modeling: Analytic and Numeric Avalanche Breakdown Criteria
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| Author(s) |
M. A. Bouanane; G. Charitat; P. Rossel |
| Abstract |
For high voltage devices the main breakdown phenomenon is caused by avalanche multiplication inside a reverse biased junction. We present, in this paper, an evaluation of avalanche breakdown criterion which can be used to predict the voltage handling capability of the device. The analytic and numeric methods, based on the ionization integral calculus, are compared. |
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| Filename: | Unnamed file |
| Filesize: | 2.472 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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