| Abstract |
The present high signal models tor bipolar power transistors contain numerous crystal structure parameters, unknown to the user. Practically, the usefulness and user-friendlyness of a model greatly depends on the ease with which its parameters can be determined. This article defines a simplified model, adapted to the commutation functioning, based on the equations of the physics describing the functioning of the semiconductor. The values of the components of the equivalent schema can be deduced from a limited number of crystal parameters, identified from the data sheets. |
