EPE Association: EPE 1993 - 04 - Lecture Session L2a: DEVICES: MODELLING

EPE 1993 - 04 - Lecture Session L2a: DEVICES: MODELLING
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   A MODULAR CONCEPT FOR THE CIRCUIT SIMULATION OF BIPOLAR POWER SEMICONDUCTORS
By Dieter Metzner; Thomas Vogler; Dierk Schröder [View]
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Abstract: Physical network simulation models of bipolar power devices strongly depend on an accurate description of the low-doped drift zone, because the behaviour of the diffusion charge in this region governs the static and dynamic device characteristics. In this paper a one-dimensional modeling module for the drift zone is presented, which accounts for all important effects under high injection conditions: Non-quasistatic ambipolar diffusion, temperature- and injection level dependent scattering and recombination effects as well as impact ionization. When combined with well known expressions describing the rest of the respective structure, very accurate and CPU-time efficient network models can be implemented, that are suited for all applications including resonant modes (ZVS, ZCS, ZVT). The module is incorporated in a commercially available network simulator and used so far for modeling the IGBT, the high power diode and the GTO. Models for BJT, FCTh, SITh and MCT will follow.

   A PHYSICALLY-BASED LUMPED-CHARGE P-v-N DIODE MODEL
By C. L. Ma; P. O. Lauritzen; P. Y. Lin [View]
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Abstract: The P-v-N diode model is developed systematically from fundamental device equations using the Lumped-Charge modeling technique. The model includes basic dc and transient characteristics of the diode, such as low and high level injection, end region recombination, forward and reverse recovery. Twelve relatively simple model equations provide static and dynamic information on electron and hole charges, currents and voltages at five different regions inside a discretized device structure. Simple parameter extraction is a unique feature.

   TECHNOLOGICAL PARAMETER IDENTIFICATION OF PIN-DIODE USING TRANSIENT SIGNAL PARAMETER FITS
By Chung-Chieh Lin; Bruno Allard; Hervé Morel; Jean-Pierre Chante [View]
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Abstract: To accurately simulate power electronic circuits and devices, it is required that one should extract the device model parameters accurately. Generally, an identification is based on static I-V characteristic fits, yet we think that it is more efficient in the case of power semiconductor devices to base the identification on transient I-V characteristic fits. In order to achieve the identification, we use an error function depending on transient signal parameters (Irm, Vrm and trr) instead of general continuous least square method. We have developed an identification procedure that consists in an estimation phase followed by an optimization phase. According to our observation and experiments, we have come to the conclusion that a simple one parameter optimization method is more efficient than other sophisticated methods. Primary results give a satisfying tolerance between simulation and experiment, and accurate identified parameter values.

   REUSING BASIC SEMICONDUCTOR REGION MODELS IN POWER DEVICE BOND GRAPH DEFINITION
By Bruno Allard; Hervé Morel; Jean-Pierre Chante [View]
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Abstract: The power device optimal choice needs an accurate prediction of the device stresses during transients. The Spice-like models do not look sufficient in the case of power bipolar devices thus we have developed a new device modelling frame based upon bond graphs and state-variable modelling. The bond graph techniques allow to take full advantage of the classical regional hypothesis that points out particular basic semiconductor regions: space-charge region, high-level injection region... Our procedure derives separately the different basic semiconductor region models. Then power device modelling consists in assembling these different basic region models to achieve a bond graph. The power device (Pin-diode, MOS and BIT transistors) bond graphs are made of the same basic semiconductor region models: this is a main advantage. The primary circuit simulation results show a good accuracy. Finally the method modular property allows simple and efficient developments and improvements.

   EFFECTS OF EPITAXIAL DOPING ON CURRENT CHARACTERISTICS IN POWER BMFETs
By G. V. Persiano; A. G. M. Strollo; P. Spirito [View]
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Abstract: Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage, even if the impurity concentration of the lightly n-doped region is increased from 2x10(13) to2x10(14)cm(-3). The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltage.

EPE 1993 - 04 - Lecture Session L2a: DEVICES: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 04 - Lecture Session L2a: DEVICES: MODELLING
	[return to parent folder]

	A MODULAR CONCEPT FOR THE CIRCUIT SIMULATION OF BIPOLAR POWER SEMICONDUCTORS By Dieter Metzner; Thomas Vogler; Dierk Schröder	[View] [Download]
Abstract: Physical network simulation models of bipolar power devices strongly depend on an accurate description of the low-doped drift zone, because the behaviour of the diffusion charge in this region governs the static and dynamic device characteristics. In this paper a one-dimensional modeling module for the drift zone is presented, which accounts for all important effects under high injection conditions: Non-quasistatic ambipolar diffusion, temperature- and injection level dependent scattering and recombination effects as well as impact ionization. When combined with well known expressions describing the rest of the respective structure, very accurate and CPU-time efficient network models can be implemented, that are suited for all applications including resonant modes (ZVS, ZCS, ZVT). The module is incorporated in a commercially available network simulator and used so far for modeling the IGBT, the high power diode and the GTO. Models for BJT, FCTh, SITh and MCT will follow.

	A PHYSICALLY-BASED LUMPED-CHARGE P-v-N DIODE MODEL By C. L. Ma; P. O. Lauritzen; P. Y. Lin	[View] [Download]
Abstract: The P-v-N diode model is developed systematically from fundamental device equations using the Lumped-Charge modeling technique. The model includes basic dc and transient characteristics of the diode, such as low and high level injection, end region recombination, forward and reverse recovery. Twelve relatively simple model equations provide static and dynamic information on electron and hole charges, currents and voltages at five different regions inside a discretized device structure. Simple parameter extraction is a unique feature.

	TECHNOLOGICAL PARAMETER IDENTIFICATION OF PIN-DIODE USING TRANSIENT SIGNAL PARAMETER FITS By Chung-Chieh Lin; Bruno Allard; Hervé Morel; Jean-Pierre Chante	[View] [Download]
Abstract: To accurately simulate power electronic circuits and devices, it is required that one should extract the device model parameters accurately. Generally, an identification is based on static I-V characteristic fits, yet we think that it is more efficient in the case of power semiconductor devices to base the identification on transient I-V characteristic fits. In order to achieve the identification, we use an error function depending on transient signal parameters (Irm, Vrm and trr) instead of general continuous least square method. We have developed an identification procedure that consists in an estimation phase followed by an optimization phase. According to our observation and experiments, we have come to the conclusion that a simple one parameter optimization method is more efficient than other sophisticated methods. Primary results give a satisfying tolerance between simulation and experiment, and accurate identified parameter values.

	REUSING BASIC SEMICONDUCTOR REGION MODELS IN POWER DEVICE BOND GRAPH DEFINITION By Bruno Allard; Hervé Morel; Jean-Pierre Chante	[View] [Download]
Abstract: The power device optimal choice needs an accurate prediction of the device stresses during transients. The Spice-like models do not look sufficient in the case of power bipolar devices thus we have developed a new device modelling frame based upon bond graphs and state-variable modelling. The bond graph techniques allow to take full advantage of the classical regional hypothesis that points out particular basic semiconductor regions: space-charge region, high-level injection region... Our procedure derives separately the different basic semiconductor region models. Then power device modelling consists in assembling these different basic region models to achieve a bond graph. The power device (Pin-diode, MOS and BIT transistors) bond graphs are made of the same basic semiconductor region models: this is a main advantage. The primary circuit simulation results show a good accuracy. Finally the method modular property allows simple and efficient developments and improvements.

	EFFECTS OF EPITAXIAL DOPING ON CURRENT CHARACTERISTICS IN POWER BMFETs By G. V. Persiano; A. G. M. Strollo; P. Spirito	[View] [Download]
Abstract: Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage, even if the impurity concentration of the lightly n-doped region is increased from 2x10(13) to2x10(14)cm(-3). The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltage.