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REUSING BASIC SEMICONDUCTOR REGION MODELS IN POWER DEVICE BOND GRAPH DEFINITION
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| Author(s) |
Bruno Allard; Hervé Morel; Jean-Pierre Chante |
| Abstract |
The power device optimal choice needs an accurate prediction of the device stresses during transients. The Spice-like models do not look sufficient in the case of power bipolar devices thus we have developed a new device modelling frame based upon bond graphs and state-variable modelling. The bond graph techniques allow to take full advantage of the classical regional hypothesis that points out particular basic semiconductor regions: space-charge region, high-level injection region... Our procedure derives separately the different basic semiconductor region models. Then power device modelling consists in assembling these different basic region models to achieve a bond graph. The power device (Pin-diode, MOS and BIT transistors) bond graphs are made of the same basic semiconductor region models: this is a main advantage. The primary circuit simulation results show a good accuracy. Finally the method modular property allows simple and efficient developments and improvements. |
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| Filename: | Unnamed file |
| Filesize: | 3.499 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-07 by System |
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