| Abstract |
To accurately simulate power electronic circuits and devices, it is required that one should extract the device model parameters accurately. Generally, an identification is based on static I-V characteristic fits, yet we think that it is more efficient in the case of power semiconductor devices to base the identification on transient I-V characteristic fits. In order to achieve the identification, we use an error function depending on transient signal parameters (Irm, Vrm and trr) instead of general continuous least square method. We have developed an identification procedure that consists in an estimation phase followed by an optimization phase. According to our observation and experiments, we have come to the conclusion that a simple one parameter optimization method is more efficient than other sophisticated methods. Primary results give a satisfying tolerance between simulation and experiment, and accurate identified parameter values. |
