| Abstract |
Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage, even if the impurity concentration of the lightly n-doped region is increased from 2x10(13) to2x10(14)cm(-3). The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltage. |
