EPE Association: EPE 2018 - LS1a: Wide Bandgap Devices

EPE 2018 - LS1a: Wide Bandgap Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - LS1a: Wide Bandgap Devices

   [return to parent folder]

   Characterization of body diodes in the-state-of-the-art SiC FETs - Are they good enough as freewheeling diodes_
By Subhadra TIWARI [View]
[Download]

Abstract: This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiCFETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOSFETs,and trench cascode SiC JFET is performed using standard double pulse test methodology. Inaddition, the switching characterization of planar discrete anti-parallel freewheeling SiC Schottky diodesis included. A series of key electrical parameters such as peak reverse recovery current, recovery time,dv/dt, and di/dt during first and second half of reverse recovery are experimentally measured in order toget an insight on the quality of these diodes.

   Impact of Gate Control on the Switching Performance of a 750A/3300V Dual SiC-Module
By Nils SOLTAU [View]
[Download]

Abstract: This paper measures dv/dt during switching of a new 3.3 kV Full SiC module rated for 750 A. Various measurements identify influences of temperature, gate resistance and gate voltage. This work analyzes controllability of voltage transients and impact on switching losses. The paper shows trade-offs between dv/dt and switching performance and indicates dv/dt ratings of commercial high-voltage SiC devices.

   Novel cascode GaN module integrated a single gate driver IC with high switching speed controllability
By Masahiro KOYAMA [View]
[Download]

Abstract: A novel gallium nitride (GaN) cascode module has been developed for high switching speed controllability. In the proposed cascode configuration, the GaN field-effect transistor (FET) is directly driven by a conventional single gate driver integrated circuit (IC). It is demonstrated that the switching speed can be simply controlled by varying the value of the external gate resistor.

   Switching SiC MOSFETs under conditions of a high power module
By Robert MAIER [View]
[Download]

Abstract: This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.The characteristic product of stray-inductance times nominal current grows with the powerrating and is a limiting factor for the speed of current commutation. The reduction of switching speeddue to this limit and its impact on switching performance is evaluated. Furthermore this paper proposesa, according to the author's knowledge, novel benchmark for characterisation and comparison of SiCMOSFET switching behaviour.

EPE 2018 - LS1a: Wide Bandgap Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - LS1a: Wide Bandgap Devices
	[return to parent folder]

	Characterization of body diodes in the-state-of-the-art SiC FETs - Are they good enough as freewheeling diodes_ By Subhadra TIWARI	[View] [Download]
Abstract: This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiCFETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOSFETs,and trench cascode SiC JFET is performed using standard double pulse test methodology. Inaddition, the switching characterization of planar discrete anti-parallel freewheeling SiC Schottky diodesis included. A series of key electrical parameters such as peak reverse recovery current, recovery time,dv/dt, and di/dt during first and second half of reverse recovery are experimentally measured in order toget an insight on the quality of these diodes.

	Impact of Gate Control on the Switching Performance of a 750A/3300V Dual SiC-Module By Nils SOLTAU	[View] [Download]
Abstract: This paper measures dv/dt during switching of a new 3.3 kV Full SiC module rated for 750 A. Various measurements identify influences of temperature, gate resistance and gate voltage. This work analyzes controllability of voltage transients and impact on switching losses. The paper shows trade-offs between dv/dt and switching performance and indicates dv/dt ratings of commercial high-voltage SiC devices.

	Novel cascode GaN module integrated a single gate driver IC with high switching speed controllability By Masahiro KOYAMA	[View] [Download]
Abstract: A novel gallium nitride (GaN) cascode module has been developed for high switching speed controllability. In the proposed cascode configuration, the GaN field-effect transistor (FET) is directly driven by a conventional single gate driver integrated circuit (IC). It is demonstrated that the switching speed can be simply controlled by varying the value of the external gate resistor.

	Switching SiC MOSFETs under conditions of a high power module By Robert MAIER	[View] [Download]
Abstract: This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.The characteristic product of stray-inductance times nominal current grows with the powerrating and is a limiting factor for the speed of current commutation. The reduction of switching speeddue to this limit and its impact on switching performance is evaluated. Furthermore this paper proposesa, according to the author's knowledge, novel benchmark for characterisation and comparison of SiCMOSFET switching behaviour.