| Abstract |
This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiCFETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOSFETs,and trench cascode SiC JFET is performed using standard double pulse test methodology. Inaddition, the switching characterization of planar discrete anti-parallel freewheeling SiC Schottky diodesis included. A series of key electrical parameters such as peak reverse recovery current, recovery time,dv/dt, and di/dt during first and second half of reverse recovery are experimentally measured in order toget an insight on the quality of these diodes. |
