| |
Switching SiC MOSFETs under conditions of a high power module
| [View]
[Download]
|
| Author(s) |
Robert MAIER |
| Abstract |
This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.The characteristic product of stray-inductance times nominal current grows with the powerrating and is a limiting factor for the speed of current commutation. The reduction of switching speeddue to this limit and its impact on switching performance is evaluated. Furthermore this paper proposesa, according to the author's knowledge, novel benchmark for characterisation and comparison of SiCMOSFET switching behaviour. |
| Download |
| Filename: | 0288-epe2018-full-15353390.pdf |
| Filesize: | 446.3 KB |
|
| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
| |
 |