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Novel cascode GaN module integrated a single gate driver IC with high switching speed controllability
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| Author(s) |
Masahiro KOYAMA |
| Abstract |
A novel gallium nitride (GaN) cascode module has been developed for high switching speed controllability. In the proposed cascode configuration, the GaN field-effect transistor (FET) is directly driven by a conventional single gate driver integrated circuit (IC). It is demonstrated that the switching speed can be simply controlled by varying the value of the external gate resistor. |
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| Filename: | 0069-epe2018-full-08280614.pdf |
| Filesize: | 1.159 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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