EPE Association: EPE 2018 - DS3a: Reliability

EPE 2018 - DS3a: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - DS3a: Reliability

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   1200-V IGBT Driver IC with Level-shift Circuit using Multi-chip Composition with High dV/dt Reliability
By Sakurai NAOKI [View]
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Abstract: We studied the problem that occurred when the level-shift circuit of a monolithic IC was applied to that of a multi-chip IC, especially malfunction caused by dV/dt of insulated gate bipolar transistors (IGBTs) switching. Using the Simulation Program with Integrated Circuit Emphasis (SPICE), we simulated a level-shift circuit of the sort used for our commercialized 600-V monolithic IC and found that when the maximum rating of the circuit was exceeded, a malfunction occurred based on dV/dt. We developed a new 1200-V level-shift circuit composed of multi-chips and used SPICE and experiment that the developed IC was supplied with DC 900V to confirm that it operated without malfunction when dV/dt was from 0 to 30 kV/µs.

   Consumed Lifetime Estimation of DFIG Power Converter with Constructed High-Resolution Mission Profile
By Guanguan ZHANG [View]
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Abstract: A high-resolution wind speed mission profile is constructed from the hourly data by using a von Karman's spectra-based method, and six constructed mission profiles with different turbulence intensities and length scales are studied. On the basis of wind speed and temperature mission profile, the consumed lifetime of the power converter in a doubly-fed induction generator-based system can be estimated by the Direct Method and the Indirect Method, where the Direct Method directly estimates the consumed lifetime by the one-second mission profile, while the Indirect Method calculates the consumed lifetime from two parts. One is based on the one-hour mission profile, and the other is calculated by the wind speed distribution and rainflow counting results of each mean wind speed. The results show that the consumed lifetime calculated by the Direct Method and the Indirect Method are the same, where the IGBT of the grid-side converter and the diode of the rotor-side converter are the fragile components. Furthermore, compared with the sampled mission profile, the constructed one leads to a higher lifetime.

   Impact of Kelvin-Source Resistors on Current Sharing and Failure Detection in Multichip Power Modules
By Nick BAKER [View]
[Download]

Abstract: The use of a kelvin-source (sometimes referred to as an auxiliary-source) terminal is becoming common in fast switching semiconductors such as Silicon Carbide MOSFETs. The kelvin-source terminal decouples the path of the load current from the path of the control current, leading to improved switching characteristics. However, in multiple paralleled chips, kelvin-source connections sometimes lead to load current imbalances among the bondwires of each paralleled chip. A simple method to prevent this is to introduce kelvin-source resistors. This paper investigates the sizing of kelvin-source resistors and their subsequent impact on current balancing. This investigation has primarily been conducted in the context of using the kelvin-source resistor as a failure detection sensor. We find that a kelvin-source resistor of 0.5 Ohms to 1 Ohms is adequate for current balancing purposes, however for dual purpose use as a failure sensor, a value of 2 Ohms or more may be recommended.

   Macro timescale RDS,on phenomena in GaN HEMTs
By Heikki JÄRVISALO [View]
[Download]

Abstract: Gallium nitride (GaN) switches have superior switching performance when compared to the traditionalSi technology. However, the GaN switches possess a phenomenon called current collapse, in whichthe channel resistance temporarily increases. In this paper, macro timescale behavior of the channelresistance under different switching stresses is studied.

   Measurement of temperature-sensitive electrical parameters of a high-power 4.5 kV IGBT module
By Martin HOEER [View]
[Download]

Abstract: Condition monitoring of power converters by way of sensorless temperature measurement is desired in order to optimize maintenance or increase performance. To date, there have been few investigations in this area for high-voltage IGBTs. This paper presents extensive measurements of temperature sensitive electrical parameters for a high-power 4.5 kV, 1.2 kA IGBT module. These parameters were extracted from switching transients in double pulse tests. The dependencies regarding collector current, collector-emitter voltage, and junction temperature were evaluated. Each parameter is rated regarding the suitability for online junction temperature estimation. The results showed that, since most parameters depend strongly on current and voltage in addition to temperature, the most suitable parameters were the quasi-static threshold voltage and maximum current and voltage rate of change during device turn-on.

   Predicting Failure of SiC MOSFETs under Short Circuit and Surge Current Conditions with a single Thermal Model
By Patrick HOFSTETTER [View]
[Download]

Abstract: In this paper a thermal model will be presented which can be used to predict the failure of SiC MOSFETs under different error conditions. It is capable of simulating a large time range to cover short circuit failures of a few microseconds and surge currents of multiple milliseconds.

   Reliability prediction of SiC MOSFET based on actual mission profile of SSPC
By Qingwen CHEN [View]
[Download]

Abstract: In order to solve the reliability problem of Solid State Power Controller (SSPC), focusing on its internal weak point, the paper carries out reliability prediction of SiC MOSFET based on Physics of Failure (PoF) model under actual mission profile of SSPC, which seems to be more accurate and reliable..

EPE 2018 - DS3a: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - DS3a: Reliability
	[return to parent folder]

	1200-V IGBT Driver IC with Level-shift Circuit using Multi-chip Composition with High dV/dt Reliability By Sakurai NAOKI	[View] [Download]
Abstract: We studied the problem that occurred when the level-shift circuit of a monolithic IC was applied to that of a multi-chip IC, especially malfunction caused by dV/dt of insulated gate bipolar transistors (IGBTs) switching. Using the Simulation Program with Integrated Circuit Emphasis (SPICE), we simulated a level-shift circuit of the sort used for our commercialized 600-V monolithic IC and found that when the maximum rating of the circuit was exceeded, a malfunction occurred based on dV/dt. We developed a new 1200-V level-shift circuit composed of multi-chips and used SPICE and experiment that the developed IC was supplied with DC 900V to confirm that it operated without malfunction when dV/dt was from 0 to 30 kV/µs.

	Consumed Lifetime Estimation of DFIG Power Converter with Constructed High-Resolution Mission Profile By Guanguan ZHANG	[View] [Download]
Abstract: A high-resolution wind speed mission profile is constructed from the hourly data by using a von Karman's spectra-based method, and six constructed mission profiles with different turbulence intensities and length scales are studied. On the basis of wind speed and temperature mission profile, the consumed lifetime of the power converter in a doubly-fed induction generator-based system can be estimated by the Direct Method and the Indirect Method, where the Direct Method directly estimates the consumed lifetime by the one-second mission profile, while the Indirect Method calculates the consumed lifetime from two parts. One is based on the one-hour mission profile, and the other is calculated by the wind speed distribution and rainflow counting results of each mean wind speed. The results show that the consumed lifetime calculated by the Direct Method and the Indirect Method are the same, where the IGBT of the grid-side converter and the diode of the rotor-side converter are the fragile components. Furthermore, compared with the sampled mission profile, the constructed one leads to a higher lifetime.

	Impact of Kelvin-Source Resistors on Current Sharing and Failure Detection in Multichip Power Modules By Nick BAKER	[View] [Download]
Abstract: The use of a kelvin-source (sometimes referred to as an auxiliary-source) terminal is becoming common in fast switching semiconductors such as Silicon Carbide MOSFETs. The kelvin-source terminal decouples the path of the load current from the path of the control current, leading to improved switching characteristics. However, in multiple paralleled chips, kelvin-source connections sometimes lead to load current imbalances among the bondwires of each paralleled chip. A simple method to prevent this is to introduce kelvin-source resistors. This paper investigates the sizing of kelvin-source resistors and their subsequent impact on current balancing. This investigation has primarily been conducted in the context of using the kelvin-source resistor as a failure detection sensor. We find that a kelvin-source resistor of 0.5 Ohms to 1 Ohms is adequate for current balancing purposes, however for dual purpose use as a failure sensor, a value of 2 Ohms or more may be recommended.

	Macro timescale RDS,on phenomena in GaN HEMTs By Heikki JÄRVISALO	[View] [Download]
Abstract: Gallium nitride (GaN) switches have superior switching performance when compared to the traditionalSi technology. However, the GaN switches possess a phenomenon called current collapse, in whichthe channel resistance temporarily increases. In this paper, macro timescale behavior of the channelresistance under different switching stresses is studied.

	Measurement of temperature-sensitive electrical parameters of a high-power 4.5 kV IGBT module By Martin HOEER	[View] [Download]
Abstract: Condition monitoring of power converters by way of sensorless temperature measurement is desired in order to optimize maintenance or increase performance. To date, there have been few investigations in this area for high-voltage IGBTs. This paper presents extensive measurements of temperature sensitive electrical parameters for a high-power 4.5 kV, 1.2 kA IGBT module. These parameters were extracted from switching transients in double pulse tests. The dependencies regarding collector current, collector-emitter voltage, and junction temperature were evaluated. Each parameter is rated regarding the suitability for online junction temperature estimation. The results showed that, since most parameters depend strongly on current and voltage in addition to temperature, the most suitable parameters were the quasi-static threshold voltage and maximum current and voltage rate of change during device turn-on.

	Predicting Failure of SiC MOSFETs under Short Circuit and Surge Current Conditions with a single Thermal Model By Patrick HOFSTETTER	[View] [Download]
Abstract: In this paper a thermal model will be presented which can be used to predict the failure of SiC MOSFETs under different error conditions. It is capable of simulating a large time range to cover short circuit failures of a few microseconds and surge currents of multiple milliseconds.

	Reliability prediction of SiC MOSFET based on actual mission profile of SSPC By Qingwen CHEN	[View] [Download]
Abstract: In order to solve the reliability problem of Solid State Power Controller (SSPC), focusing on its internal weak point, the paper carries out reliability prediction of SiC MOSFET based on Physics of Failure (PoF) model under actual mission profile of SSPC, which seems to be more accurate and reliable..