| Filename: | 0352-epe2018-full-12041365.pdf |
| Filesize: | 660.8 KB |
| Macro timescale RDS,on phenomena in GaN HEMTs | ||||||
| Author(s) | Heikki JÄRVISALO | |||||
| Abstract | Gallium nitride (GaN) switches have superior switching performance when compared to the traditionalSi technology. However, the GaN switches possess a phenomenon called current collapse, in whichthe channel resistance temporarily increases. In this paper, macro timescale behavior of the channelresistance under different switching stresses is studied. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-05-05 by System | |||||
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