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Predicting Failure of SiC MOSFETs under Short Circuit and Surge Current Conditions with a single Thermal Model
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| Author(s) |
Patrick HOFSTETTER |
| Abstract |
In this paper a thermal model will be presented which can be used to predict the failure of SiC MOSFETs under different error conditions. It is capable of simulating a large time range to cover short circuit failures of a few microseconds and surge currents of multiple milliseconds. |
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| Filename: | 0219-epe2018-full-10090598.pdf |
| Filesize: | 2.399 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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