EPE Association: EPE 2017 - LS3e: Silicon Power Devices

EPE 2017 - LS3e: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 01: Devices, Packaging and System Integration > EPE 2017 - LS3e: Silicon Power Devices

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   A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications
By Chunlin ZHU [View]
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Abstract: A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimentaldemonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, highfrequency and relatively high voltage operations which are desirable in HEV/EV system. Theproposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dtcontrollability with variations of Rgon without sacrificing turn-off and on-state performance whencompared to the conventional grounded dummy trench gate IGBT (GDT-IGBT). In addition, its muchlower surge current during short circuit turn-on, enhances short circuit robustness.

   Large area (150mm) High voltage (6.5kV) Reverse Conducting IGCT
By Thomas STIASNY [View]
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Abstract: A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal behavior of the device. In addition, the HPT+ (High Power Technology) platform has been employed in the GCT part to increase the safe operation area of the device (to achieve high controllable turn-off current capability). In this paper we present the measurement results of the 150mm, 6.5kV RC-IGCT during conduction and turn-off in both GCT (switch)- and diode-modes of operation. In addition, we have compared the technology trade-off curve of the 150mm, 6.5kV RC-IGCT with the state-of-the-art 6.5kV HiPak IGBT modules in switch-mode.

   Paralleling High Power Dual Modules: A Challenge for Application Engineers and Power Device Manufacturers
By Jan WEIGEL [View]
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Abstract: This paper discusses the challenges of paralleling dual modules with special focus on the currentlyintroduced dual modules like LinPak, nHPD2, XHP, LV/HV100, etc.. Compared with IHM/IHVmodules3 to 4 times as many modules have to be paralleled to achieve the same output power. Therefore theparallel connection will play a major role in designing high power converters, used e.g. in tractionapplications. This paper explains the reasons of current mismatch in parallel connection of IGBTmodules and gives suggestions how to minimize current imbalance.

   Short-circuit detection based on gate-emitter voltage of high-voltage IGBTs
By Jan FUHRMANN [View]
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Abstract: Short-circuit detection is one important feature of a gate-drive unit and a solution without a collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily detected. A circuit, which detects and turns off the short, and measurements for different shorts on high-voltage IGBTs are presented.

EPE 2017 - LS3e: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 01: Devices, Packaging and System Integration > EPE 2017 - LS3e: Silicon Power Devices
	[return to parent folder]

	A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications By Chunlin ZHU	[View] [Download]
Abstract: A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimentaldemonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, highfrequency and relatively high voltage operations which are desirable in HEV/EV system. Theproposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dtcontrollability with variations of Rgon without sacrificing turn-off and on-state performance whencompared to the conventional grounded dummy trench gate IGBT (GDT-IGBT). In addition, its muchlower surge current during short circuit turn-on, enhances short circuit robustness.

	Large area (150mm) High voltage (6.5kV) Reverse Conducting IGCT By Thomas STIASNY	[View] [Download]
Abstract: A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal behavior of the device. In addition, the HPT+ (High Power Technology) platform has been employed in the GCT part to increase the safe operation area of the device (to achieve high controllable turn-off current capability). In this paper we present the measurement results of the 150mm, 6.5kV RC-IGCT during conduction and turn-off in both GCT (switch)- and diode-modes of operation. In addition, we have compared the technology trade-off curve of the 150mm, 6.5kV RC-IGCT with the state-of-the-art 6.5kV HiPak IGBT modules in switch-mode.

	Paralleling High Power Dual Modules: A Challenge for Application Engineers and Power Device Manufacturers By Jan WEIGEL	[View] [Download]
Abstract: This paper discusses the challenges of paralleling dual modules with special focus on the currentlyintroduced dual modules like LinPak, nHPD2, XHP, LV/HV100, etc.. Compared with IHM/IHVmodules3 to 4 times as many modules have to be paralleled to achieve the same output power. Therefore theparallel connection will play a major role in designing high power converters, used e.g. in tractionapplications. This paper explains the reasons of current mismatch in parallel connection of IGBTmodules and gives suggestions how to minimize current imbalance.

	Short-circuit detection based on gate-emitter voltage of high-voltage IGBTs By Jan FUHRMANN	[View] [Download]
Abstract: Short-circuit detection is one important feature of a gate-drive unit and a solution without a collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily detected. A circuit, which detects and turns off the short, and measurements for different shorts on high-voltage IGBTs are presented.