| Abstract |
A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1.4. The RC-IGCT wafers were designed with an outer ring gate structure to minimize the stray impedance for the gate signal and also to improve the thermal behavior of the device. In addition, the HPT+ (High Power Technology) platform has been employed in the GCT part to increase the safe operation area of the device (to achieve high controllable turn-off current capability). In this paper we present the measurement results of the 150mm, 6.5kV RC-IGCT during conduction and turn-off in both GCT (switch)- and diode-modes of operation. In addition, we have compared the technology trade-off curve of the 150mm, 6.5kV RC-IGCT with the state-of-the-art 6.5kV HiPak IGBT modules in switch-mode. |
