| Abstract |
A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimentaldemonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, highfrequency and relatively high voltage operations which are desirable in HEV/EV system. Theproposed chip shows improved trade-off relationship between turn-on di/dt and Eon, and effective di/dtcontrollability with variations of Rgon without sacrificing turn-off and on-state performance whencompared to the conventional grounded dummy trench gate IGBT (GDT-IGBT). In addition, its muchlower surge current during short circuit turn-on, enhances short circuit robustness. |
