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 EPE 2017 - DS3b: Reliability 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 01: Devices, Packaging and System Integration > EPE 2017 - DS3b: Reliability 
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   A Reliability-oriented Component Sizing Procedure for Cost Benchmarking of Capacitive DC-links 
 By Haoran WANG 
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Abstract: This paper proposes a reliability-oriented component sizing procedure for the cost benchmarking of capacitive DC-links. The sizing of devices for different solutions is based on consistent specifications and design margins (e.g., designed lifetime, maximum junction temperature, and maximum total harmonic distortion). A scalability analysis is also presented to identify the most cost-effective solution in different application scenarios.

 
   Analysis of the Effects from Constant Random and Wear-out Failures of Sub-modules within a Modular Multi-level Converter with Varying Maintenance Periods 
 By James WYLIE 
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Abstract: Constant random and wear-out failures of sub-modules (SM) within a Modular Multi-level Converter (MMC) are examined. Constant random failures are calculated using the binomial distribution formula, using a constant failure rate. Wear-out failures are calculated using discrete Markov chain modelling and Monte Carlo estimation, with the failure rate of a SM increasing with time. The results are compared with various maintenance intervals and different levels of availability to show the trends and characteristics. It is shown that for large gains in availability, relatively small increases in the number of redundant SMs are required. Additionally, the number of redundant SMs required to support longer maintenance intervals increase at less than a linear rate, making increasing maintenance intervals for applications such as offshore converter stations attractive

 
   Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index 
 By Michael PRANTNER 
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Abstract: Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency.In the specific case of two level power converter it has not been up to now clearly shown thepotential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysisfor different devices is carried out, considering system efficiency, heatsink size and output filter design.The results are condensed in a performance index, that allows comparing different solutions.

 
   Lifetime Prediction of Power Devices in Maglev Choppers Using Physics-based Electro-thermo-mechanical Model 
 By Zhikai LIN 
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Abstract: With commercial operation of the first Chinese Maglev line, lifetime prediction of power devices inMaglev choppers becomes a crucial topic. This paper adopts a mission profile of one typical Maglevchopper for lifetime prediction. A test rig is built for the IGBT/Diode case temperature measurement.Using look-up tables of IGBT/Diode module losses, an accurate electro-thermal model can beestablished. The thermal impedance of the heatsink is extracted by using the simulated case temperaturecurve to fit the experiment curve. So the junction temperature for the given mission profile could beestimated according to the typical current mission profile. Different lifetime models including analyticand physical methods are used to evaluate the lifetime. It can be concluded that using redundant chips(higher current rating) could be very helpful to increase the lifetime of key components, i.e. IGBTs.

 
   Model Based Temperature Control System to Increase the Expected Lifetime of IGBT Power Modules Executed on a Neutral Point Diode Clamped Three Level Inverter 
 By Julian WÖLFLE 
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Abstract: The model based temperature control system examined in this paper increases the expected lifetime ofIGBT power modules by decreasing the magnitude of temperature swings occurring during operation.In order to achieve this goal additional power losses are produced during low load conditions. This iscarried out by presetting a reactive current. The three level neutral point diode clamped three phaseinverter drives a permanent magnet synchronous machine. The basic functionality is demonstrated ona simple test cycle. In order to illustrate the beneficial usage on a more complex load cycle a drivingcycle is exercised representing the electric vehicle as field of application. The improvement in regardto the expected lifetime and the generated additional power losses of the inverter and of the permanentsynchronous machine will be addressed and discussed.

 
   Online collector-emitter saturation voltage measurement for the in-situ temperature estimation of a high-power 4.5 kV IGBT module 
 By Martin HOEER 
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Abstract: A novel online measurement unit for capturing the collector-emitter voltage during conduction mode has been developed. This is a well-known method for the health monitoring of power semiconductors and for estimating the junction temperature. This method is shown in the literature for up to 1000 V DC-link voltages. However, an online measurement for high-voltage (4.5 kV) IGBTs demands a new approach, as existing solutions cannot be applied. The solution proposed is experimentally verified with a 4.5-kV IGBT at various junction temperatures, collector currents and collector-emitter voltages.

 
   Performance Enhancement of a Modular Test System for Power Semiconductors for HTOL Testing by Use of an Embedded System 
 By Roland SLEIK 
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Abstract: Today, performing life tests on power semiconductor devices is of major importance in industrial and automotive power applications. Traditionally, qualification tests, like the HTOL test, are carried out in a semi-automated manner. This paper first reviews different test methods and a recently proposed modular test system (MTS) that allows testing of individual devices as well as application specific tests. The MTS can automatically deliver significantly more information on the reliability of the device under test (DUT) . Then, the performance enhancement of HTOL testing through use of a new embedded system is demonstrated.

 
   Power Device Waveform Function Model for Circuit Simulation Described with VHDL-AMS 
 By SAKURAI NAOKI 
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Abstract: We develop new power device models that express the waveforms of power devices by functions. These models are described with VHDL-AMS, which is a hardware description language. The developed model can accurately reproduce the diode recovery waveforms calculated by the TCAD model in the same time as when using the SPICE model.

 
   Thermal stressing mitigation possibility intended for a DC-current magnet supply based on high power IGBT modules 
 By Panagiotis ASIMAKOPOULOS 
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Abstract: This work investigates the possibility to reduce the thermal stressing of high power IGBT modules in a DC-current application. Using four load current profiles as examples, two mitigation strategies are presented and their benefit to the power stack in terms of lifetime prolongation is evaluated. In the final part of the work, the investigation focuses on the relation between the shape of the load current and the potential for thermal stressing limitation that the proposed mitigation strategies can provide.