| Abstract |
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency.In the specific case of two level power converter it has not been up to now clearly shown thepotential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysisfor different devices is carried out, considering system efficiency, heatsink size and output filter design.The results are condensed in a performance index, that allows comparing different solutions. |
