EPE Association: EPE 2015 - DS3c: Reliability

EPE 2015 - DS3c: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS3c: Reliability

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   A feasibility study of using gate-emitter voltage method to estimate IGBT online junction temperature in practical applications
By Gernot J. RIEDEL [View]
[Download]

Abstract: The paper presents the feasibility of using gate-emitter voltage during IGBT turn-off in estimating the junction temperature of semiconductor chips in IGBT modules in real-time application. It is shown that the chosen parameter has negligible module and measurement circuit variation once calibrated and has been implemented successfully in a converter.

   Determination of parameters with high impact on fatigue of new Interconnect Technologies
By Lukas TINSCHERT [View]
[Download]

Abstract: The point of highest mechanical load in an interconnect layer, where crack propagation will start, depends strongly on geometry and material of the attached die as it was already indicated by the CIPS08 lifetime model for insulated models. Therefore, simulations with the following varied geometry parameters were conducted: thickness, area and material of the die as well as thickness of the interconnect layer. Subsequently, the impact of each parameter on the fatigue of the interconnect layer will be discussed.

   Development of Field Data Logger for Recording Mission Profile of Power Converters
By Sanjay CHAUDHARY [View]
[Download]

Abstract: Mission profile data provides useful data for a cost effective and reliable design of future power converters. The development of a field data logger using a Raspberry Pi (RBPI) and temperature and humidity sensors is presented. The collected data is analyzed and classified for the purpose of data reduction. Key parameters used in Arrhenius and Coffin-Manson equations are computed continuously using the collected data. In addition the rain-flow cycle count algorithm is implemented to record cyclic temperature variations. The prototype has been installed in an inverter for photovoltaic generation and the collected data are presented here.

   Effects of current filaments during dynamic avalanche on the collector-emitter-voltage of high voltage Trench-IGBTs
By GIUSEPPE DE FALCO [View]
[Download]

Abstract: In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs duringswitching conditions sufficiently stressful to trigger the dynamic avalanche phenomenon. The analysesshow the effect of current filamentation on the collector-emitter-voltage of the IGBT.

   Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault
By Georgios KAMPITSIS [View]
[Download]

Abstract: In this paper, the robustness of 1.2 kV normally-on SiC JFETs against short circuits is investigated through experimental parametric analysis and three-dimensional thermal model simulation. Particular emphasis is given to the study of short circuits in the wiring outside the power converter, in which case, a large stray inductance is part of the main power loop. This work presents a more accurate and realistic analysis of the subject, absent from relative literature, since stray inductances are usually ignored. A destructive test is performed in order to obtain the short circuit withstand capability and the failure mechanism of the power device. The experimental results reveal that the loss of the gate control is attributed to the punch-through voltage increase with higher temperatures and depends on the gate current and consequently the turn-off gate resistor.

   Evaluation of On-state Voltage VCE(ON) and Threshold Voltage Vth for Real-time Health Monitoring of IGBT Power Modules
By Amir ELEFFENDI [View]
[Download]

Abstract: This paper investigates by experiment and simulation the use of the real-time measurements of on-state voltage VCE(ON) and threshold voltage Vth for real-time health monitoring of IGBT power modules. A study of the dependencies of each parameter on temperature, wear-out mechanisms and operating conditions is presented. Online measurement circuits are developed to obtain these two parameters during the normal operation of power converters. Junction temperature estimation for health monitoring is implemented using Vth which is a thermo-sensitive electrical parameter. The data of VCE(ON), Vth and TJ are combined in a residual-based health monitoring framework which allows the discrimination between two dominant failure mechanisms of power modules: wire-bond lift-off and solder fatigue.

   Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage
By Martin HOEER [View]
[Download]

Abstract: An online temperature estimation method for IGBTs has been developed. It is based on the gate-emitter threshold voltage captured during the turn-on transient, which can be used as a temperature-sensitive electrical parameter. A dedicated measurement board directly connected to the power device was designed and tested in a high-power 4.5-kV IGBT module over its whole operation range.

   Relibility Enhance Powertrain Using Fuzzy Knowledge Base prognostics Model
By Alireza ALGHASSI [View]
[Download]

Abstract: The aim of this paper is to develop a real time conditional monitoring of the inverter based on IGBT. IGBT failure model has been developed by using fuzzy logic that adapts prognostic model with the fuzzy nature of failure mechanism. In this way it is possible to efficiently estimate the remaining useful life (RUL) of Insulated Gate Bipolar Transistor (IGBT).

   Small Junction Temperature Cycles on Die-attach Solder Layer in IGBT
By Lai WEI [View]
[Download]

Abstract: This paper presents a method to obtain the effects of small _Tj on the power modules so that we can enhance the reliability and lifetime model. Bonding wire fatigue and die-attach solder fatigue have been identified as one of the main root causes of power electronic module failures. Power cycling rig is designed to obtain the process of power module failure and account for the thermal fatigue life behavior. It is proved that solder fatigue is earlier than bonding wire fatigue, therefore ageing tests which produce initial crack in the solder layer before do small _Tj test are designed. The experiment results show that not only small _Tj still cause the module damage only for aged module but also the higher the junction temperature is the faster the crack degrades.

   Temperature and strain mappings over forward biased power IGBT cross-section area by Î¼-Raman spectroscopy
By Thierry KOCINIEWSKI [View]
[Download]

Abstract: Thermal characterizations inside power device crystal are required for failure analyses physic of power electronic devices. We have succeeded to keep power devices functional after cross section. We use Raman spectroscopy to map temperature and mechanical stress distributions on cross-sections of IGBT (Insulated Gate Bipolar Transistor) devices in forward bias conditions with spatial resolution up to 500nm. Temperature and stress contributions on Raman diffusion were deconvoluted fitting Full Width at Half Maximum (FWHM) and position of the Stokes peak. For the first time, it was possible to quantify experimentally temperature and stress evolutions in the Si bulk during operation. These results give experimental data on thermo-mechanical coupling in power devices. We have also compared stress measurements in unbiased condition with numerical models made with finite elements under ANSYS with a focus on IGBT elementary cell areas.

   Vce-based chip temperature estimation methods for high power IGBT modules during power cycling - A comparison
By Anastasios AMOIRIDIS [View]
[Download]

Abstract: Temperature estimation is of great importance for performance and reliability of IGBT power modulesin converter operation as well as in active power cycling tests. It is common to be estimated throughThermo-Sensitive Electrical Parameters such as the forward voltage drop (Vce) of the chip. This experi-mental work evaluates the validity and accuracy of two Vce based methods applied on high power IGBTmodules during power cycling tests. The first method estimates the chip temperature when low sensecurrent is applied and the second method when normal load current is present. Finally, a correctionfactor that eliminates the series resistance contribution on the Vce measured at high current, is proposed.

EPE 2015 - DS3c: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS3c: Reliability
	[return to parent folder]

	A feasibility study of using gate-emitter voltage method to estimate IGBT online junction temperature in practical applications By Gernot J. RIEDEL	[View] [Download]
Abstract: The paper presents the feasibility of using gate-emitter voltage during IGBT turn-off in estimating the junction temperature of semiconductor chips in IGBT modules in real-time application. It is shown that the chosen parameter has negligible module and measurement circuit variation once calibrated and has been implemented successfully in a converter.

	Determination of parameters with high impact on fatigue of new Interconnect Technologies By Lukas TINSCHERT	[View] [Download]
Abstract: The point of highest mechanical load in an interconnect layer, where crack propagation will start, depends strongly on geometry and material of the attached die as it was already indicated by the CIPS08 lifetime model for insulated models. Therefore, simulations with the following varied geometry parameters were conducted: thickness, area and material of the die as well as thickness of the interconnect layer. Subsequently, the impact of each parameter on the fatigue of the interconnect layer will be discussed.

	Development of Field Data Logger for Recording Mission Profile of Power Converters By Sanjay CHAUDHARY	[View] [Download]
Abstract: Mission profile data provides useful data for a cost effective and reliable design of future power converters. The development of a field data logger using a Raspberry Pi (RBPI) and temperature and humidity sensors is presented. The collected data is analyzed and classified for the purpose of data reduction. Key parameters used in Arrhenius and Coffin-Manson equations are computed continuously using the collected data. In addition the rain-flow cycle count algorithm is implemented to record cyclic temperature variations. The prototype has been installed in an inverter for photovoltaic generation and the collected data are presented here.

	Effects of current filaments during dynamic avalanche on the collector-emitter-voltage of high voltage Trench-IGBTs By GIUSEPPE DE FALCO	[View] [Download]
Abstract: In this work, we present a TCAD simulation based analysis on high voltage trench IGBTs duringswitching conditions sufficiently stressful to trigger the dynamic avalanche phenomenon. The analysesshow the effect of current filamentation on the collector-emitter-voltage of the IGBT.

	Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault By Georgios KAMPITSIS	[View] [Download]
Abstract: In this paper, the robustness of 1.2 kV normally-on SiC JFETs against short circuits is investigated through experimental parametric analysis and three-dimensional thermal model simulation. Particular emphasis is given to the study of short circuits in the wiring outside the power converter, in which case, a large stray inductance is part of the main power loop. This work presents a more accurate and realistic analysis of the subject, absent from relative literature, since stray inductances are usually ignored. A destructive test is performed in order to obtain the short circuit withstand capability and the failure mechanism of the power device. The experimental results reveal that the loss of the gate control is attributed to the punch-through voltage increase with higher temperatures and depends on the gate current and consequently the turn-off gate resistor.

	Evaluation of On-state Voltage VCE(ON) and Threshold Voltage Vth for Real-time Health Monitoring of IGBT Power Modules By Amir ELEFFENDI	[View] [Download]
Abstract: This paper investigates by experiment and simulation the use of the real-time measurements of on-state voltage VCE(ON) and threshold voltage Vth for real-time health monitoring of IGBT power modules. A study of the dependencies of each parameter on temperature, wear-out mechanisms and operating conditions is presented. Online measurement circuits are developed to obtain these two parameters during the normal operation of power converters. Junction temperature estimation for health monitoring is implemented using Vth which is a thermo-sensitive electrical parameter. The data of VCE(ON), Vth and TJ are combined in a residual-based health monitoring framework which allows the discrimination between two dominant failure mechanisms of power modules: wire-bond lift-off and solder fatigue.

	Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage By Martin HOEER	[View] [Download]
Abstract: An online temperature estimation method for IGBTs has been developed. It is based on the gate-emitter threshold voltage captured during the turn-on transient, which can be used as a temperature-sensitive electrical parameter. A dedicated measurement board directly connected to the power device was designed and tested in a high-power 4.5-kV IGBT module over its whole operation range.

	Relibility Enhance Powertrain Using Fuzzy Knowledge Base prognostics Model By Alireza ALGHASSI	[View] [Download]
Abstract: The aim of this paper is to develop a real time conditional monitoring of the inverter based on IGBT. IGBT failure model has been developed by using fuzzy logic that adapts prognostic model with the fuzzy nature of failure mechanism. In this way it is possible to efficiently estimate the remaining useful life (RUL) of Insulated Gate Bipolar Transistor (IGBT).

	Small Junction Temperature Cycles on Die-attach Solder Layer in IGBT By Lai WEI	[View] [Download]
Abstract: This paper presents a method to obtain the effects of small _Tj on the power modules so that we can enhance the reliability and lifetime model. Bonding wire fatigue and die-attach solder fatigue have been identified as one of the main root causes of power electronic module failures. Power cycling rig is designed to obtain the process of power module failure and account for the thermal fatigue life behavior. It is proved that solder fatigue is earlier than bonding wire fatigue, therefore ageing tests which produce initial crack in the solder layer before do small _Tj test are designed. The experiment results show that not only small _Tj still cause the module damage only for aged module but also the higher the junction temperature is the faster the crack degrades.

	Temperature and strain mappings over forward biased power IGBT cross-section area by Î¼-Raman spectroscopy By Thierry KOCINIEWSKI	[View] [Download]
Abstract: Thermal characterizations inside power device crystal are required for failure analyses physic of power electronic devices. We have succeeded to keep power devices functional after cross section. We use Raman spectroscopy to map temperature and mechanical stress distributions on cross-sections of IGBT (Insulated Gate Bipolar Transistor) devices in forward bias conditions with spatial resolution up to 500nm. Temperature and stress contributions on Raman diffusion were deconvoluted fitting Full Width at Half Maximum (FWHM) and position of the Stokes peak. For the first time, it was possible to quantify experimentally temperature and stress evolutions in the Si bulk during operation. These results give experimental data on thermo-mechanical coupling in power devices. We have also compared stress measurements in unbiased condition with numerical models made with finite elements under ANSYS with a focus on IGBT elementary cell areas.

	Vce-based chip temperature estimation methods for high power IGBT modules during power cycling - A comparison By Anastasios AMOIRIDIS	[View] [Download]
Abstract: Temperature estimation is of great importance for performance and reliability of IGBT power modulesin converter operation as well as in active power cycling tests. It is common to be estimated throughThermo-Sensitive Electrical Parameters such as the forward voltage drop (Vce) of the chip. This experi-mental work evaluates the validity and accuracy of two Vce based methods applied on high power IGBTmodules during power cycling tests. The first method estimates the chip temperature when low sensecurrent is applied and the second method when normal load current is present. Finally, a correctionfactor that eliminates the series resistance contribution on the Vce measured at high current, is proposed.