EPE Association: EPE 2015 - DS2a: Active Components

EPE 2015 - DS2a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS2a: Active Components

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   10kV SiC MOSFET split output power module
By Szymon BECZKOWSKI [View]
[Download]

Abstract: The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

   A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules
By Wu RUI [View]
[Download]

Abstract: This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such phenomenon.

   A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st / 7th generation 1200V/650V chipset for UPS and PV inverter application
By Marco HONSBERG [View]
[Download]

Abstract: Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.

   Analysis of the three-chip switching cells approach for integrated multi-phase IGBT- based power converter
By Adem LALE [View]
[Download]

Abstract: In this paper, the authors present a novel integration approach for multi-phase IGBT module, based on both monolithic and hybrid integration methods. In this proposed '3-chip' approach, the discrete switches are integrated into three generic monolithic multi-pole power chips and assembled with a judicious packaging. This reduces significantly the commutation loop area and so the stray inductance responsible of overshoot voltage and common-mode dv/dt effect. The operating modes of the multi-pole chips were validated in an inverter application by 2D simulations under mixed-mode SentaurusTM. In order to characterize the commutation loop of the 3-chip approach, two prototype power modules with different technologies (Si and SiC dies) have been realized on PCB substrates. The stray inductances were measured using a precision impedance analyzer (frequency analysis). A double-pulse characterization was also performed to illustrate the effect of stray inductance reduction at the turn-off (temporal analysis). For comparison purposes, two 'classical' power converters have been also realized and analyzed. According the results, measurements and analytic estimates, the proposed packaging design allows reducing the stray inductance by at least a ratio of two as compared to the classical layout.

   Application of proton irradiation with energy over 10 MeV for reverse recovery characteristics control of high voltage freewheeling diodes
By Alexey SURMA [View]
[Download]

Abstract: The following aspects of using irradiation with accelerated protons, which have initial energy over 10 MeV, for production of high voltage freewheeling diodes are being described: generation of uneven lifetime distribution inside the semiconductor element; implementation of the hidden, induced with implanted hydrogen n'-layers into the semiconductor element. It is shown that there is a possibility to produce freewheeling diodes for 4500 V voltage, which can safely operate in snubberless mode during reverse recovery with DC link reverse voltage over 3000 V and current drop rate over 5000 A/µs.

   Characterization and Evaluation of SiC Devices for DC-DC Power Supply Applications
By EDUARDO MIGUEL [View]
[Download]

Abstract: Silicon Carbide MOSFETs and Schottky diodes can operate at higher voltages and higher temperatures than their Silicon counterparts. Nowadays, SiC devices can compete with Si ultrafast diodes and Si IGBTs in terms of efficiency and converter volume. This paper shows the experimental characterization of SiC devices and their comparison with Si devices to demonstrate their superior performance in resonant DC-DC power converters. Finally, preliminary experimental measurements from the constructed resonant converter are shown.

   Implementation of the NIST IGBT Model based on Ordinary Differential Equations
By Niklaus FELDERER [View]
[Download]

Abstract: Modeling the electrical behavior of insulated gate bipolar transistors (IGBTs) with ideal and instantaneous transitions allows a fast and efficient simulation of power electronic circuits at the system level. Some phenomena at the very moment of the switching transition are neglected however by this modeling method, such as the turn-on and turn-off delay time of the IGBTs or gate drive circuit requirements. The more detailed NIST1 IGBT model accounting for these effects requires an algebraic differential equation (DAE) solver, which solves the system equations in a sophisticated iterative manner. On the other hand, system level simulators such as PLECS use a description of physical models based on ordinary differential equations (ODEs) for the sake of speed and stability of the simulation. The following work presents a description of the NIST IGBT model using ODEs and an implementation in PLECS. It is then compared by means of transient simulation to existing implementations in other circuit simulators.

   Interaction between IGBT, diode and parasitic Inductances during Short-Circuit Type 3
By Jan FUHRMANN [View]
[Download]

Abstract: During short-circuit type 3 which occurs when the freewheeling diode conducts current and the anti-parallel IGBT is switched on the current commutates from the diode to the IGBT and vice versa. This commutation between the semiconductor includes parasitic inductances on the module substrate which are not optimized. During the short-circuit type 3 the avalanche of the diode, the collector-emitter voltage at the beginning of the short-circuit, the voltage stress of the semiconductor and the current mismatch between the IGBTs are infuenced by the parasitic inductances. In this paper the inductance on substrate level is measured and the influence on the short-circuit behavior is presented with the help of measurements and simulations. The behavior of the IGBT during the short-circuit especially at the beginning is explained with the help of the parasitic inductances. Moreover an equivalent circuit for the substrate inductances between IGBT and diode is discussed.

   Investigation of Parasitic Turn-ON in Silicon IGBT and Silicon Carbide MOSFET Devices: A Technology Evaluation
By SAEED JAHDI [View]
[Download]

Abstract: This paper investigates the switching rate and temperature dependence of parasitic (false) turn-on of power transistors when switched in power converters implemented in silicon IGBTs and Silicon Carbide (SiC) MOSFETs. It is shown that although high switching rates are normally desirable for minimizing the switching losses, this can result in shoot-through arm currents due to the combination of a Miller capacitance and high dV/dt. The power losses arising from this can be significantly larger than the normal switching losses since the device will still be blocking a considerable voltage. Even though SiC MOSFETs have a significantly smaller Miller capacitance compared with silicon IGBTs, this problem is no less of an issue due to higher switching speeds and lower threshold voltages. Additionally it is seen that the overshoot current increases with temperatures due to the negative temperature coefficient of the threshold voltage in both device technologies. Various solutions to overcome this have been analyzed for both device technologies. It is seen that the effectiveness of the mitigation techniques differs, and in general due to the lower threshold voltage of the SiC device, the solutions proposed are less effective.

   RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: physical analysis and application to the integration of a multiphase generic
By Adem LALE [View]
[Download]

Abstract: The RC-IGBT-thyristor is a bidirectional current device proposed as an elementary structure for the integration of a multiphase converter using the 'two-chip' integration approach [1]. In this paper, 2D simulations are on one hand used to study the impact of using trenches filled with dielectric [2] on the static and dynamic performance of the RC-IGBT-thyristor and on the other hand to validate the operating modes of the common anode and common cathode power chips that make use of the RC- IGBT-thyristor that has trenches filled with dielectric on the backside. In the RC-IGBT-Thyristor with trenches, the trenches are placed between N+ anode regions to allow the turn-on of the thyristor sections during the RC-IGBT-thyristor reverse conducting mode. The use of these trenches allows reducing the lengths of N+/P+ anode diffusion regions (as compared to the case of the RC-IGBT- Thyristor [1]) and also improves the uniformity of the current density distribution both in the forward and reverse conducting modes of the RC-IGBT-thyristor. The RC-IGBT-thyristor with trenches filled with dielectric is then used to create the two monolithic common anode and common cathode power chips. These three-pole power chips, were simulated separately and then associated to form an H- bridge converter.

   Soft Recovery Diodes with Snappy Behavior
By Peter LOSEE [View]
[Download]

Abstract: This paper illustrates several issues that a user of high voltage PiN diodes may encounter in actual application conditions. It shows that high-voltage power diodes require specifiable on-time prior to entering their reverse recovery phase and offers 1D device simulations and measurements taken on several actual high power diodes to illustrate and explain all the concepts introduced.

   Static and Dynamic Analysis of SiC Based Commercial MOSFET Power Modules
By Muhammad NAWAZ [View]
[Download]

Abstract: Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature are key requirement parameters, such as converter valve in HVDC and FACTS systems. What is also critical is the short circuit performance (i.e., short circuit withstand capability) in the practical high power application for fault mode protection. This paper deals with static and dynamic measurements performed for SiC based commercial MOSFETs power modules. First dynamic tests using single pulse test setup has been performed with commercial gate drive unit. Results from engineering samples show overall good confidence level. Furthermore, no reverse recovery in the SiC diode is observed. A short circuit analysis in hard switched fault (HSF) mode at 800 V and 600 V showed a short circuit survivability time of over 10 µs for SiC power modules.

   The Effect of Different Stray Inductances on the Performance of Various Types of IGBTs - Is Less Always Better_
By Stefan HAIN [View]
[Download]

Abstract: In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what extent a faster switch and diode can be exploited in a low inductance circuit.

   The Single Reference Bi-Directional GaN HEMT AC Switch
By Dominique BERGOGNE [View]
[Download]

Abstract: A novel device, the Single Reference Bi-Directional [SRDB] GaN HEMT AC Switch is presented in this paper from an application engineer's point of view. First, the device structure and the main characteristics are introduced. In a second part, the device is implemented in an AC chopper circuit to demonstrate it's hability to switch an AC current from an AC voltage source, then a DC chopper is used to set the device into a switching cell.

EPE 2015 - DS2a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - DS2a: Active Components
	[return to parent folder]

	10kV SiC MOSFET split output power module By Szymon BECZKOWSKI	[View] [Download]
Abstract: The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

	A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules By Wu RUI	[View] [Download]
Abstract: This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such phenomenon.

	A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st / 7th generation 1200V/650V chipset for UPS and PV inverter application By Marco HONSBERG	[View] [Download]
Abstract: Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.

	Analysis of the three-chip switching cells approach for integrated multi-phase IGBT- based power converter By Adem LALE	[View] [Download]
Abstract: In this paper, the authors present a novel integration approach for multi-phase IGBT module, based on both monolithic and hybrid integration methods. In this proposed '3-chip' approach, the discrete switches are integrated into three generic monolithic multi-pole power chips and assembled with a judicious packaging. This reduces significantly the commutation loop area and so the stray inductance responsible of overshoot voltage and common-mode dv/dt effect. The operating modes of the multi-pole chips were validated in an inverter application by 2D simulations under mixed-mode SentaurusTM. In order to characterize the commutation loop of the 3-chip approach, two prototype power modules with different technologies (Si and SiC dies) have been realized on PCB substrates. The stray inductances were measured using a precision impedance analyzer (frequency analysis). A double-pulse characterization was also performed to illustrate the effect of stray inductance reduction at the turn-off (temporal analysis). For comparison purposes, two 'classical' power converters have been also realized and analyzed. According the results, measurements and analytic estimates, the proposed packaging design allows reducing the stray inductance by at least a ratio of two as compared to the classical layout.

	Application of proton irradiation with energy over 10 MeV for reverse recovery characteristics control of high voltage freewheeling diodes By Alexey SURMA	[View] [Download]
Abstract: The following aspects of using irradiation with accelerated protons, which have initial energy over 10 MeV, for production of high voltage freewheeling diodes are being described: generation of uneven lifetime distribution inside the semiconductor element; implementation of the hidden, induced with implanted hydrogen n'-layers into the semiconductor element. It is shown that there is a possibility to produce freewheeling diodes for 4500 V voltage, which can safely operate in snubberless mode during reverse recovery with DC link reverse voltage over 3000 V and current drop rate over 5000 A/µs.

	Characterization and Evaluation of SiC Devices for DC-DC Power Supply Applications By EDUARDO MIGUEL	[View] [Download]
Abstract: Silicon Carbide MOSFETs and Schottky diodes can operate at higher voltages and higher temperatures than their Silicon counterparts. Nowadays, SiC devices can compete with Si ultrafast diodes and Si IGBTs in terms of efficiency and converter volume. This paper shows the experimental characterization of SiC devices and their comparison with Si devices to demonstrate their superior performance in resonant DC-DC power converters. Finally, preliminary experimental measurements from the constructed resonant converter are shown.

	Implementation of the NIST IGBT Model based on Ordinary Differential Equations By Niklaus FELDERER	[View] [Download]
Abstract: Modeling the electrical behavior of insulated gate bipolar transistors (IGBTs) with ideal and instantaneous transitions allows a fast and efficient simulation of power electronic circuits at the system level. Some phenomena at the very moment of the switching transition are neglected however by this modeling method, such as the turn-on and turn-off delay time of the IGBTs or gate drive circuit requirements. The more detailed NIST1 IGBT model accounting for these effects requires an algebraic differential equation (DAE) solver, which solves the system equations in a sophisticated iterative manner. On the other hand, system level simulators such as PLECS use a description of physical models based on ordinary differential equations (ODEs) for the sake of speed and stability of the simulation. The following work presents a description of the NIST IGBT model using ODEs and an implementation in PLECS. It is then compared by means of transient simulation to existing implementations in other circuit simulators.

	Interaction between IGBT, diode and parasitic Inductances during Short-Circuit Type 3 By Jan FUHRMANN	[View] [Download]
Abstract: During short-circuit type 3 which occurs when the freewheeling diode conducts current and the anti-parallel IGBT is switched on the current commutates from the diode to the IGBT and vice versa. This commutation between the semiconductor includes parasitic inductances on the module substrate which are not optimized. During the short-circuit type 3 the avalanche of the diode, the collector-emitter voltage at the beginning of the short-circuit, the voltage stress of the semiconductor and the current mismatch between the IGBTs are infuenced by the parasitic inductances. In this paper the inductance on substrate level is measured and the influence on the short-circuit behavior is presented with the help of measurements and simulations. The behavior of the IGBT during the short-circuit especially at the beginning is explained with the help of the parasitic inductances. Moreover an equivalent circuit for the substrate inductances between IGBT and diode is discussed.

	Investigation of Parasitic Turn-ON in Silicon IGBT and Silicon Carbide MOSFET Devices: A Technology Evaluation By SAEED JAHDI	[View] [Download]
Abstract: This paper investigates the switching rate and temperature dependence of parasitic (false) turn-on of power transistors when switched in power converters implemented in silicon IGBTs and Silicon Carbide (SiC) MOSFETs. It is shown that although high switching rates are normally desirable for minimizing the switching losses, this can result in shoot-through arm currents due to the combination of a Miller capacitance and high dV/dt. The power losses arising from this can be significantly larger than the normal switching losses since the device will still be blocking a considerable voltage. Even though SiC MOSFETs have a significantly smaller Miller capacitance compared with silicon IGBTs, this problem is no less of an issue due to higher switching speeds and lower threshold voltages. Additionally it is seen that the overshoot current increases with temperatures due to the negative temperature coefficient of the threshold voltage in both device technologies. Various solutions to overcome this have been analyzed for both device technologies. It is seen that the effectiveness of the mitigation techniques differs, and in general due to the lower threshold voltage of the SiC device, the solutions proposed are less effective.

	RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: physical analysis and application to the integration of a multiphase generic By Adem LALE	[View] [Download]
Abstract: The RC-IGBT-thyristor is a bidirectional current device proposed as an elementary structure for the integration of a multiphase converter using the 'two-chip' integration approach [1]. In this paper, 2D simulations are on one hand used to study the impact of using trenches filled with dielectric [2] on the static and dynamic performance of the RC-IGBT-thyristor and on the other hand to validate the operating modes of the common anode and common cathode power chips that make use of the RC- IGBT-thyristor that has trenches filled with dielectric on the backside. In the RC-IGBT-Thyristor with trenches, the trenches are placed between N+ anode regions to allow the turn-on of the thyristor sections during the RC-IGBT-thyristor reverse conducting mode. The use of these trenches allows reducing the lengths of N+/P+ anode diffusion regions (as compared to the case of the RC-IGBT- Thyristor [1]) and also improves the uniformity of the current density distribution both in the forward and reverse conducting modes of the RC-IGBT-thyristor. The RC-IGBT-thyristor with trenches filled with dielectric is then used to create the two monolithic common anode and common cathode power chips. These three-pole power chips, were simulated separately and then associated to form an H- bridge converter.

	Soft Recovery Diodes with Snappy Behavior By Peter LOSEE	[View] [Download]
Abstract: This paper illustrates several issues that a user of high voltage PiN diodes may encounter in actual application conditions. It shows that high-voltage power diodes require specifiable on-time prior to entering their reverse recovery phase and offers 1D device simulations and measurements taken on several actual high power diodes to illustrate and explain all the concepts introduced.

	Static and Dynamic Analysis of SiC Based Commercial MOSFET Power Modules By Muhammad NAWAZ	[View] [Download]
Abstract: Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature are key requirement parameters, such as converter valve in HVDC and FACTS systems. What is also critical is the short circuit performance (i.e., short circuit withstand capability) in the practical high power application for fault mode protection. This paper deals with static and dynamic measurements performed for SiC based commercial MOSFETs power modules. First dynamic tests using single pulse test setup has been performed with commercial gate drive unit. Results from engineering samples show overall good confidence level. Furthermore, no reverse recovery in the SiC diode is observed. A short circuit analysis in hard switched fault (HSF) mode at 800 V and 600 V showed a short circuit survivability time of over 10 µs for SiC power modules.

	The Effect of Different Stray Inductances on the Performance of Various Types of IGBTs - Is Less Always Better_ By Stefan HAIN	[View] [Download]
Abstract: In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what extent a faster switch and diode can be exploited in a low inductance circuit.

	The Single Reference Bi-Directional GaN HEMT AC Switch By Dominique BERGOGNE	[View] [Download]
Abstract: A novel device, the Single Reference Bi-Directional [SRDB] GaN HEMT AC Switch is presented in this paper from an application engineer's point of view. First, the device structure and the main characteristics are introduced. In a second part, the device is implemented in an AC chopper circuit to demonstrate it's hability to switch an AC current from an AC voltage source, then a DC chopper is used to set the device into a switching cell.