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A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st / 7th generation 1200V/650V chipset for UPS and PV inverter application
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| Author(s) |
Marco HONSBERG |
| Abstract |
Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications. |
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| Filename: | 0246-epe2015-full-15251044.pdf |
| Filesize: | 911 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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