| Abstract |
The following aspects of using irradiation with accelerated protons, which have initial energy over 10 MeV, for production of high voltage freewheeling diodes are being described: generation of uneven lifetime distribution inside the semiconductor element; implementation of the hidden, induced with implanted hydrogen n'-layers into the semiconductor element. It is shown that there is a possibility to produce freewheeling diodes for 4500 V voltage, which can safely operate in snubberless mode during reverse recovery with DC link reverse voltage over 3000 V and current drop rate over 5000 A/µs. |
